Results 131 to 140 of about 547 (185)

Low‐distortion GaAs varactor diodes

Electronics and Communications in Japan (Part I: Communications), 1981
AbstractSince a GaAs varacter diode has higher Q than a Si diode, it has been widely used for microwaves. This diode must have a hyper‐abrupt junction so as to cover a wide frequency band. However, there are technical limitations in the case of GaAs and up to the present it is realized by the double epitaxial growth method.
Tohru Hara, Ikuo Niikura, Nobuyuki Toyoda   +2 more
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HIGH Q VARACTOR DIODES

1963
Abstract : Low pump power varactor diodes have been fabricated using epitaxial GaAs. Frequency cut-offs as high as 785 kmc have been obtained at break down. A detailed analysis of the parameters in influencing point-contact GaAs varactors is given. The results of a basic program to determine the feasibility of employing high energy gap semi conductors ...
R. O. Bell, A. I. Mlavsky, Martin Weinstein   +2 more
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Physical Device Modeling of a Varactor Diode

IEEE Transactions on Magnetics, 2004
Starting with the recipe for the fabrication process of a silicon p-n junction varactor diode, the semiconductor device equations are solved using the finite-element method. The capacitance of the reverse biased diode is extracted using the junction depletion width which is quantified by introducing a depletion factor.
Masidlover, Alexander R., Gibson, Andrew A P   +1 more
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Planar varactor diode development

17th International Conference on Infrared and Millimeter Waves, 2017
ill./ A.F.AL11.11,16...1,1,11 Schottky barrier varactor diodes are used as frequency multipliers to supply local oscillator power for heterodyne receivers at millimeter and submillimeter wavelengths. Whisker contacted diodes have been developed which generate sufficient power at frequencies as high as 700 GHz for ground based and airborne experiments ...
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Elastance coefficients for varactor diodes

International Journal of Electronics, 1974
This paper deals with the analysis and computations of the elastance Fourier coefficients of a pumped varactor diode, under different pump-level conditions. Consistent results are obtained from the two different methods employed to evaluate these coefficients.
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Varactor Diode Impedance Measurements†

Journal of Electronics and Control, 1964
ABSTRACT A comparison is made between impedance data obtained by two different methods for a coaxially encapsulated varactor diode. In one of these the impedances are normalized to the series resistance of the diode and in the other to the characteristic impedance of the measuring line. The agreement between the two sets of data is good.
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Varactor Diode Q-factor Measurements†

Journal of Electronics and Control, 1963
ABSTRACT The Q-factor, capacitance and resistance of the semiconductor region, can be obtained by a simple extension of the technique described by Harrison.
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Design considerations of hyperabrupt varactor diodes

IEEE Transactions on Electron Devices, 1971
This paper describes the design calculations and fabrication techniques used to produce hyperabrupt varactor diodes. The computation consists of determining, the doping profile, the capacitance as a function of applied voltage, the breakdown voltage, and the series resistance; allowance is made for the nonlinear variation of mobility with doping ...
P.J. Kannam, S. Ponczak, J.A. Olmstead
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Evaluation of high quality varactor diodes

Radio and Electronic Engineer, 1966
Recent measurement procedures used between 1 Mc/s and 40 Gc/s in evaluating very high cut-off frequency varactor diodes are discussed. The types of measurement are: bridge measurements at low frequencies, microwave coaxial line measurements, a transmission method near the diode series-resonant frequency, and a transmission method at diode parallel ...
D.A.E. Roberts, K. Wilson
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Control of Parameters of Varactor Diodes

IETE Journal of Research, 1969
The important parameters of a diffused silicon varactor diode are related to process parameters. Each processing step is analysed for yield and spread in the process parameters it controls. The final yield of the fabrication process and the spread in the device parameters involve yield and spread for each step. Practical results show that the yield and
W. S. Khokle, A. K. Ray
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