Results 171 to 180 of about 1,302 (222)

GALLIUM ARSENIDE VARACTOR DIODES

1963
Abstract : Emphasis was placed on fabricating very high cutoff frequency diodes having breakdown voltages in excess of 6 v. Devices were fabricated using both melt-grown GaAs and epitaxial material. The results indicate that the highest cutoff frequencies were achieved using melt grown GaAs and that the best devices fabricated have cutoff frequencies ...
G. A. Kupsky, H. Kressel
openaire   +1 more source

Gallium arsenide varactor diodes

Radio and Electronic Engineer, 1966
From consideration of the factors influencing the design of varactor diodes for use in high-frequency parametric amplifiers and multipliers it appears that GaAs is the most suitable choice of semiconductor. The high carrier mobility of this material over a wide range of temperatures should enable high cut-off frequency varactor diodes tobe fabricated ...
C.A.P. Foxell, K. Wilson
openaire   +1 more source

Elastance coefficients for varactor diodes

International Journal of Electronics, 1974
This paper deals with the analysis and computations of the elastance Fourier coefficients of a pumped varactor diode, under different pump-level conditions. Consistent results are obtained from the two different methods employed to evaluate these coefficients.
openaire   +1 more source

Development and characterization of varactor diodes for millimeter wavelenghts

1967 International Electron Devices Meeting, 1967
The GaAs varactors described here are P+NN+ mesa devices with base widths (distance between P-+ and N+regions) made as narrow as possible to achieve high cutoff frequency. Routine dimensions are now 1 to 2 microns using as thin a P+ diffusion as the epitaxial layer thickness permits. Diffusion depth is typically 1.5 to 2.0 microns.
C. Orman, M. Goff
openaire   +1 more source

High-Q GaAs varactor diodes

IEEE Transactions on Electron Devices, 1978
A double epitaxial gallium arsenide tuning diode has been developed for TV varactor tuners. The capacitance variation ratio is 6.0 and is large enough to cover the UHF TV broadcasting band. Diode series resistance is 0.18 Ω ( Q = 200 ) at 470 MHz, and at a capacitance of 9 pF.
T. Hara, I. Niikura, N. Toyoda, M. Mihara   +3 more
openaire   +1 more source

Characteristics of varactor diodes biased into avalanche

1965 International Electron Devices Meeting, 1965
Johnston, DeLoach, and Cohen have recently reported on the generation of microwave energy from reverse biased p-n junctions which were driven into the avalanche region. The present paper describes the performance obtained from diffused and epitaxial diffused silicon and epitaxial diffused gallium arsenide diodes designed primarily for parametric ...
V.J. Higgins, F.A. Br, J.J. Baranowski
openaire   +1 more source

Planar varactor diode development

17th International Conference on Infrared and Millimeter Waves, 2017
ill./ A.F.AL11.11,16...1,1,11 Schottky barrier varactor diodes are used as frequency multipliers to supply local oscillator power for heterodyne receivers at millimeter and submillimeter wavelengths. Whisker contacted diodes have been developed which generate sufficient power at frequencies as high as 700 GHz for ground based and airborne experiments ...
openaire   +1 more source

A varactor diode based predistortion circuit

2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), 2004
Operation and performance of a varactor diode based linearizer is investigated. This novel predistortion topology employs a series resonant circuit with a reverse biased varactor diode acting as a power dependant capacitor. The linearizer itself is both simulated and tested to display its nonlinear properties.
N. Gupta, A. Tombak, A. Mortazawi
openaire   +1 more source

Characteristics of varactor diodes at low temperatures

Radio and Electronic Engineer, 1967
An experimental investigation of varactor diode junction properties at low temperatures has been performed. Both elemental and compound type diodes have been examined, including two silicon varactors produced by different doping techniques and a diffused mesa-type gallium arsenide varactor.
D. Chakraborty, R. Coackley
openaire   +1 more source

Evaluation of high quality varactor diodes

Radio and Electronic Engineer, 1966
Recent measurement procedures used between 1 Mc/s and 40 Gc/s in evaluating very high cut-off frequency varactor diodes are discussed. The types of measurement are: bridge measurements at low frequencies, microwave coaxial line measurements, a transmission method near the diode series-resonant frequency, and a transmission method at diode parallel ...
D.A.E. Roberts, K. Wilson
openaire   +1 more source