A Simple Gamma Random Number Generator for Arbitrary Shape Parameters [PDF]
This paper proposes an improved gamma random generator. In the past, a lot of gamma random number generators have been proposed, and depending on a shape parameter (say, alpha) they are roughly classified into two cases: (i) alpha lies on the interval (0,
Hisashi Tanizaki
core
A construction of statistical inferences in geographically weighted univariate log-gamma regression. [PDF]
Rini DS, Purhadi, Andari S.
europepmc +1 more source
Stretching the Printability Metric in Direct‐Ink Writing with Highly Extensible Yield‐Stress Fluids
This study introduces “drawability” as a new metric for assessing printability in direct‐ink writing, focusing on gap‐spanning performance and speed robustness. By designing yield‐stress fluids with high extensibility, we demonstrate that extensional strain‐to‐break significantly enhances printability.
Chaimongkol Saengow +9 more
wiley +1 more source
In this Demonstration we visualize the probability density function of the variance-gamma distribution, which has parameters μ (location), α (tail), β (asymmetry), and λ (scale). These are all real-valued, with the additional constraints λ>0, α>max(0,|β|)
Falloon, Peter
core
Ictal gamma increase shows preferential localization to seizure onset contacts in stereoelectroencephalography. [PDF]
Jian Y, Hou K, Zhang W, Wang L, Wang J.
europepmc +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Ferroelectricity in Antiferromagnetic Wurtzite Nitrides
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa +3 more
wiley +1 more source
Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand +5 more
wiley +1 more source
GAMMA-RAY: A Fully Automated and Rapid System for High-Dimensional Multi-Phenotype Analysis Considering Population Structure. [PDF]
Kim T, Song J, Joo JWJ.
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source

