Results 151 to 160 of about 191,241 (260)

Microstructure‑Dependent Phase Transformations Under High‑Pressure Laser Heating in Additively Manufactured AlCrFe2Ni2

Advanced Engineering Materials, EarlyView.
Additively manufactured AlCrFe2Ni2 with contrasting BCC/B2‐dominant and lamellar FCC + BCC/B2 microstructures exhibits the same pressure‐induced BCC/B2 → HCP transformation. Under laser heating at high pressure, HCP is destabilized, and a cubic BCC/B2 + FCC assemblage is recovered, while the lower‐scan‐speed microstructure transforms at a lower ...
Raimundas Sereika, Hunter Kantelis, Yogesh K. Vohra, Shengbiao Zhang, Wuxian Yang, Wen Chen   +5 more
wiley   +1 more source

New Mean-Variance Gamma Method for Automatic Gamma Correction [PDF]

International Journal of Image, Graphics and Signal Processing, 2017
Meriama Mahamdioua, Mohamed Benmohammed
openaire   +1 more source

Natural radioactivity and associated hazard indices from a gas field (Fenchuganj, Bangladesh): Assessment and management guidelines. [PDF]

PLoS One
Begum M, Hossain S, Rashid MB, Habib MA, Khan R, Siraz MMM, Yeasmin S, Al Mamun SMM, Hossain SM.   +8 more
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

The Wells-Riley Model Revisited II: Parameter Uncertainty and Population Heterogeneity. [PDF]

Risk Anal
Marshall M, Edwards AJ, Pinnell D, King MF, Noakes CJ, Elaldi N, Lythe G, López-García M.   +7 more
europepmc   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Limited evidence for causal effects of circulating inflammatory cytokines on the risk of selected hematologic malignancies: a two-sample Mendelian randomization study. [PDF]

Blood Res
Zhang H, Zhang L, Zhao D, Ma B, Wang J, Liu X, Yin W, Shen Y, Yang L, Dong W, Wang C.   +10 more
europepmc   +1 more source

Electrostatic Superlattices Beyond 1:1 Stoichiometry

Advanced Functional Materials, EarlyView.
Polymer‐mediated charge regulation drives two hierarchical routes to higher‐stoichiometry nanoparticle superlattices. Tuning the polymer's molecular weight promotes progressive interstitial filling, transforming ZnS into the fully occupied CaF2${\rm CaF}_2$ lattice. Exchanging polymer assignment between large and small nanoparticles instead breaks CsCl
Binay P. Nayak, Prapti Kakkar, Wesley P. Korba, Honghu Zhang, Wenjie Wang, Surya K. Mallapragada, Alex Travesset, David Vaknin   +7 more
wiley   +1 more source

DEEP LEARNING OF SEMI-COMPETING RISK DATA VIA A NEW NEURAL EXPECTATION-MAXIMIZATION ALGORITHM. [PDF]

Ann Appl Stat
Salerno S, Zhang Z, Li Y.
europepmc   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source