Results 181 to 190 of about 11,179,949 (250)
Benchmarking Quantum Solvers in Noisy Digital Simulations for Financial Portfolio Optimization. [PDF]
Shen R, Hao Z, Lee CH.
europepmc +1 more source
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian +1 more
wiley +1 more source
Optimizing Tourism Routes: A Quantum Approach to the Profitable Tour Problem. [PDF]
Cheng XS, Liu YH, Dong XH, Wang Y.
europepmc +1 more source
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
GEORCE: a fast new control algorithm for computing geodesics. [PDF]
Rygaard FM, Hauberg S.
europepmc +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Visualising backward information propagation in deep reinforcement learning from a variational data assimilation perspective. [PDF]
Wang KY.
europepmc +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Counterdiabatic ADAPT-VQE for Molecular Simulation. [PDF]
Tancara D, Díaz-Moraga H, Goyeneche D.
europepmc +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source

