Results 171 to 180 of about 11,262 (263)
Carbon nanotube-Yttrium iron garnet nanohybrid synthesized via chemical vapor deposition and its potential application in fabricated screen-printed patch antenna. [PDF]
Hasan IH +5 more
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Bipolar Switching Properties and Reaction Decay Effect of BST Ferroelectric Thin Films for Applications in Resistance Random Access Memory Devices. [PDF]
Wang YC +6 more
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Xuetong Zhao, Jing Guo, Sinan Dursun
exaly +2 more sources
Improvement in varistor properties of CaCu3Ti4O12 ceramics by chromium addition
Edson Cezar Grzebielucka +2 more
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A unique tuning effect of Mg on grain boundaries and grains of ZnO varistor ceramics
Journal of the European Ceramic Society, 2021Xin Ren
exaly +2 more sources
Shreevats pandey, Juan Liu, Dong Xu
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Sintering effect on varistor properties and degradation behavior of ZVMB varistor ceramics
Journal of Materials Science: Materials in Electronics, 2017ZnO–V2O5–Mn3O4–Bi2O3 (ZVMB) varistor ceramics were sintered at a low temperature range of 800–875 °C, and the microstructure, electrical properties, dielectric characteristics, and DC-accelerated aging behavior were systematically investigated. Analysis of the microstructure indicated that the average grain size increased from 3.8 to 6.4 µm with the ...
C. Nahm
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The Calculation Model for ZnO Varistor Considering Micro-characteristics
2023 12th Asia-Pacific International Conference on Lightning (APL), 2023The insulation level of power system is based on the overvoltage protection level of arresters. Zinc oxide(ZnO) varistor is widely used as the core element in power arrester and surge suppressor because of its excellent nonlinear voltage-current(V-I ...
Jingke Guo +6 more
semanticscholar +1 more source
Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor
IEEE Transactions on Electron Devices, 2022Unclamped inductive switching (UIS) robustness of SiC devices with parallel-connected varistor was evaluated to design the cutoff current capability of solid-state circuit breakers (SSCBs).
W. Saito, Z. Lou, S. Nishizawa
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