Results 121 to 130 of about 1,546 (174)
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[1991 Proceedings] 6th Mediterranean Electrotechnical Conference, 2002
Two shapes of interdigitated planar varistors were made using thick-film technology on alumina substrates. These varistor were based on ZnO paste. The distance between varistor electrodes were changed from 0.2 to 1.91 mm, and the total length of the electrodes from 49 to 230 mm.
T.D. Grozdic +3 more
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Two shapes of interdigitated planar varistors were made using thick-film technology on alumina substrates. These varistor were based on ZnO paste. The distance between varistor electrodes were changed from 0.2 to 1.91 mm, and the total length of the electrodes from 49 to 230 mm.
T.D. Grozdic +3 more
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Sintering effect on varistor properties and degradation behavior of ZVMB varistor ceramics
Journal of Materials Science: Materials in Electronics, 2017ZnO–V2O5–Mn3O4–Bi2O3 (ZVMB) varistor ceramics were sintered at a low temperature range of 800–875 °C, and the microstructure, electrical properties, dielectric characteristics, and DC-accelerated aging behavior were systematically investigated. Analysis of the microstructure indicated that the average grain size increased from 3.8 to 6.4 µm with the ...
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[1991] Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials, 2002
The frequency characteristics of the capacity and the dissipation factor of a ceramic ring varistor have been measured in the range from 10 kHz to 1 MHz. From the measurements, the equivalent circuit was determined, considering the internal structure of the ceramic ring varistor.
M. Suzuki +3 more
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The frequency characteristics of the capacity and the dissipation factor of a ceramic ring varistor have been measured in the range from 10 kHz to 1 MHz. From the measurements, the equivalent circuit was determined, considering the internal structure of the ceramic ring varistor.
M. Suzuki +3 more
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Journal of Physics: Condensed Matter, 1993
Among the mechanisms suggested to account for degradation of varistor materials, ion migration has strong support. Mobile, positively charged ions in the depletion layer would be the key element in degradation. In this context, the authors discuss the consequences of an electrical stressing on the current-temperature characteristic of a comment ...
M S Castro, M A Benavente, C M Aldao
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Among the mechanisms suggested to account for degradation of varistor materials, ion migration has strong support. Mobile, positively charged ions in the depletion layer would be the key element in degradation. In this context, the authors discuss the consequences of an electrical stressing on the current-temperature characteristic of a comment ...
M S Castro, M A Benavente, C M Aldao
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Polarization currents in varistors
Journal of Applied Physics, 1990The time, voltage, and temperature dependencies of transient polarization currents are reported for two types of varistors (i.e., ZnO and a SiC composite). The current transients exhibit a power-law time response to a step change in voltage (i.e., I≊I0/tm, where m is slightly less than unity) that persists over a time scale exceeding 10−8–104 s.
F. A. Modine +4 more
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Time Dependence of Degradation in ZnO Varistors
physica status solidi (a), 1982Starting from the results of a previous paper on the functional relationship of the degradation of ZnO-varistors and the influence factors (especially U, I,T) an equation system is derived to describe the time-dependence of the degradation. The solutions including the contribution of degradation-, recovery- and increasing effects of currents and ...
W. Brückner +2 more
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Thermal breakdown in ZnO-varistor ceramics
Physica Status Solidi (a), 1980Thermal breakdowns representing an essential mechanism for the lifetime limitation of ZnO-varistor ceramics are characterized with respect to the parameters of the breakdown point (especially breakdown temperature Tb) (for 21 °C as ambient temperature: Tb = 174 °C).
W. Brückner, W . Moldenhauer, D. Hinz
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IEEE Electrical Insulation Magazine, 1989
An overview is given of zinc oxide varistors, which are made of semiconducting ceramics with highly nonohmic current-voltage characteristics, which originate at the grain boundaries. These varistors are widely utilized to protect electric power lines and electronic components against dangerous voltage surges.
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An overview is given of zinc oxide varistors, which are made of semiconducting ceramics with highly nonohmic current-voltage characteristics, which originate at the grain boundaries. These varistors are widely utilized to protect electric power lines and electronic components against dangerous voltage surges.
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Varistor effect in semiconductor ferroelectrics
Technical Physics, 1997This paper treats the effect of an external field on the magnitude of potential barriers and the potential contour near a charged boundary between crystallites in polycrystalline ferroelectric semiconductors. It is shown that this effect depends on the mutual directions of the external field and the polarization in the ferroelectric bulk, and that the ...
A. N. Pavlov, I. P. Raevskii
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Hybrid Circuits, 1993
Various thick film varistor constructions were made and characterised: ‘sandwich’, ‘interdigitated’ and ‘segmented’ varistors. The varistor active layer thickness, the electrode surface value and shape were varied. The Ul characteristics of these varistors were compared mutually, and with the Ul characteristics of the smallest chip varistors.
O.S. Aleksić +3 more
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Various thick film varistor constructions were made and characterised: ‘sandwich’, ‘interdigitated’ and ‘segmented’ varistors. The varistor active layer thickness, the electrode surface value and shape were varied. The Ul characteristics of these varistors were compared mutually, and with the Ul characteristics of the smallest chip varistors.
O.S. Aleksić +3 more
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