Results 161 to 170 of about 19,724 (234)

Visible vertical-cavity surface-emitting lasers

Optical Society of America Annual Meeting, 1992
We report the operation of visible-light (670-630 nm) vertical-cavity surface-emitting lasers (VCSELs) in a photopumped structure. Visible VCSELs are a promising breakthrough for visible laser technology because of their surfacenormal operation, nonastigmatic output beams, ease of fabrication of closely spaced 1- and 2-dimensional arrays, and ease of ...
R. P. Bryan, R. P. Schneider, J. A. Lott, G. R. Olbright   +3 more
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Passive vertical cavity surface emitting lasers

IEEE Photonic Society 24th Annual Meeting, 2011
We have recently demonstrated a vertical cavity surface emitting laser (VCSEL) formed by a passive half-wavelength cavity combined with a quantum dot active region contained within a quarter-wavelength thick layer of the upper distributed Bragg reflector (DBR) [1].
A. M. Kasten, S. N. Brown, J. A. Lott, V. A. Shchukin, N. N. Ledentsov, K. D. Choquette   +5 more
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Holographic vertical-cavity surface-emitting laser

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013), 2003
Summary form only given. We present holographic diffraction from a broad-area thin-film holographic laser. The holographic laser is similar to a vertical-cavity surface-emitting laser (VCSEL) and consists of a 1 /spl mu/m thick GaAs active layer sandwiched between two 61.6 nm Al/sub 0.1/Ga/sub 0.9/As-AlAs 72.8 nm Bragg stacks, centered at 870 nm, with ...
K.M. Kwolek, D.D. Nolte, C. Lenox, B. Streetman   +3 more
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Midinfrared vertical-cavity surface-emitting laser

Applied Physics Letters, 1997
We report a type-II antimonide midinfrared vertical-cavity surface-emitting laser. The emission wavelength of 2.9 μm is nearly independent of temperature (dλ/dT≈0.07 nm/K) and the multimode linewidth is quite narrow (3.5 nm). The pulsed threshold power at 86 K is as low as 22 mW for a 30 μm spot.
C. L. Felix, W. W. Bewley, I. Vurgaftman, J. R. Meyer, L. Goldberg, D. H. Chow, E. Selvig   +6 more
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Visible vertical-cavity surface-emitting laser

SPIE Proceedings, 1998
We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy (MOVPE). We use the 8 lambda optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain in AlGaInP active region. The structure has a p-type stack
Peng Cheng, Xiaoyu Ma, Junhua Gao, Xuejun Kang, Qing Cao, Hongjie Wang, Liping Luo, Chunhui Zhang, Xiuling Lu, ShiMing Lin   +9 more
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Vertical cavity surface-emitting laser diodes

Annual Meeting Optical Society of America, 1989
We reported all-MBE grown vertical resonator diodes with an active layer made of GaAs bulk and of GaAs/AlGaAs quantum wells. Vertical current injection through two semiconductor mirrors was made possible by a novel reflector structure on the p-side of the diode.
K. Tai, R. J. Fischer, K. F. Huang, D. G. Deppe, F. Ren, S. N. G. Chu, A. Y. Cho   +6 more
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Vertical-cavity surface-emitting laser technology

SPIE Proceedings, 1993
The technology of vertical cavity surface emitting lasers (VCSELs) has grown dramatically in recent years. We have processed and packaged VCSELs, for various applications. The thermal, output coupling, and spectral characteristics for different devices and packages are shown. Practical single device and array packages, and the results of their coupling
Frank H. Peters, Marian L. Majewski, Matthew G. Peters, Jeff W. Scott, Brian Thibeault, D. Bruce Young, Larry A. Coldren   +6 more
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Antiguided vertical-cavity surface-emitting lasers

SPIE Proceedings, 2001
Novel single-mode VCSEL designs based on antiguided structures are discussed. Modal characteristics of single-element, 8-12m-dia, ARROW-type VCSELs and two-dimensional phase-locked arrays (4x4 elements) of antiguided VCSELs are studied. ARROW-type VCSELs exhibit low loss for the fundamental mode and strong high-order mode suppression as a result of ...
Luke J. Mawst, Delai Zhou
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Vertical cavity surface emitting laser diodes

SPIE Proceedings, 1990
Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAS/A1GaAS and MOVPE-grown InGaAsPf.EnP material systems with emission wavelengths near 0.87 and 1.3 p.m. respectively. The GaAS/A1GaAS VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with ...
Kuochou Tai, L. Yang, R. J. Fischer, Tawee Tanbun-Ek, Ralph A. Logan, Yan H. Wang, Minghwei Hong, Alfred Y. Cho   +7 more
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InGaAs vertical-cavity surface-emitting lasers

IEEE Journal of Quantum Electronics, 1991
The authors give theoretical and experimental results for vertical-cavity surface-emitting lasers (VCSELs). The modeling is applied to the design of InGaAs VCSELs. A simple method to calculate the reflectivity of semiconductor stack mirrors with graded interfaces and compound metal/semiconductor stack mirrors is introduced.
R.S. Geels, S.W. Corzine, L.A. Coldren
openaire   +1 more source