Results 71 to 80 of about 1,030,132 (246)

Measuring the Hall Effect in Hysteretic Materials

open access: yesAdvanced Materials, EarlyView.
The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya   +6 more
wiley   +1 more source

Evaluation of Adding Customized Plication in Lipoabdominoplasty: A preliminary Pilot Study in Zagazig University Hospitals [PDF]

open access: yesZagazig University Medical Journal
Background: Musculoaponeurotic laxity is a key contributor to abdominal wall deformities, particularly in postpartum women. While vertical (midline) plication remains the standard approach in abdominoplasty, it often falls short in achieving optimal ...
Mohamed Nasr   +3 more
doaj   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

High drain field impact ionization transistors as ideal switches

open access: yesNature Communications
Impact ionization effect has been demonstrated in transistors to enable sub-60 mV dec−1 subthreshold swing. However, traditionally, impact ionization in silicon devices requires a high operation voltage due to limited electrical field near the device ...
Baowei Yuan   +25 more
doaj   +1 more source

Organic Electrochemical Transistors for Neuromorphic Bioelectronics: Materials and Manufacturing Technologies. [PDF]

open access: yesAdv Sci (Weinh)
Organic electrochemical transistors bridge biological ionic signaling and neuromorphic computation through volumetric electrochemical gating. This review connects Organic mixed ionic–electronic conductor materials, device architectures, and manufacturing technologies to show how geometry, ion transport, and fabrication strategies program plasticity ...
Lee H   +5 more
europepmc   +2 more sources

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

open access: yesAdvanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen   +7 more
wiley   +1 more source

Brain drain in developing countries [PDF]

open access: yes
Relying on an original data set on international migration by educational attainment for 1990 and 2000, we analyze the determinants of the brain drain from developing countries.
Abdeslam, MARFOUK   +2 more
core  

Application of Prefabricated Vertical Drain in Soil Improvement

open access: yesCivil Engineering Dimension, 2012
Although the use of Prefabricated Vertical Drain (PVD) in soil improvement is not new, this paper is interesting since it gives the full spectrum from preliminary design stage; trial embankment and pilot test to final soil improvement.
Tedjakusuma B.
doaj  

Using the Transversal Admittance to Understand Organic Electrochemical Transistors

open access: yesAdvanced Science
The transient behavior of organic electrochemical transistors (OECTs) is complex due to mixed ionic‐electronic properties that play a central role in bioelectronics and neuromorphic applications.
Juan Bisquert, Scott T. Keene
doaj   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

open access: yesAdvanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho   +17 more
wiley   +1 more source

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