Results 141 to 150 of about 8,040 (305)
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash +4 more
wiley +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Shaking Table Tests to Evaluate Effectiveness of Vertical Drains for Liquefaction Mitigation [PDF]
13-8731TPF-5(244)This research was designed to evaluate the ability of vertical drains to prevent liquefaction and limit associated settlement. Drain performance was investigated using full-scale tests with vertical drains in liquefiable sand using a ...
Brigham Young University. Department of Civil and Environmental Engineering +2 more
core
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar +9 more
wiley +1 more source
A Novel Model for Predicting Post-Craniotomy Meningitis Using Early Postoperative Risk Stratification: A Multi-Center Retrospective Study. [PDF]
Zhao J +5 more
europepmc +1 more source
Silicon Nitride Resistive Memories
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source
Drainless Day-procedure Abdominoplasty: Reduced Pain and Fewer Complications in 210 Consecutive Cases. [PDF]
Linsell MD.
europepmc +1 more source
The integration of ultra‐flexible, all‐organic, field‐effect transistor‐based strain sensors to soft structures is reported for the development of sensorized soft robots. The envisaged application is the development of next‐generation, controllable, and observable soft robotic catheters for endoscopic applications, such as drug delivery. Mechanical and
Usama Mahmood +5 more
wiley +1 more source

