Results 191 to 200 of about 7,314,118 (318)

Synergistic Pyro‐Phototronics and Structural Anisotropy in CsAg2I3/GaN Heterostructures for High‐Performance Polarization‐Sensitive UV Photodetectors

open access: yesAdvanced Science, EarlyView.
The development of polarization‐sensitive ultraviolet photodetectors is limited by poor heterojunction quality and low polarization sensitivity. This study integrates synthesized CsAg2I3 single crystals with intrinsic non‐centrosymmetry into van der Waals heterojunction devices, demonstrating pronounced pyro‐phototronic effect.
Yalin Zhai   +9 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta   +9 more
wiley   +1 more source

Ion Charge Compensation upon Electrochemical Doping of Redox Polymer Films with Tunable Crosslinking Density

open access: yesAdvanced Electronic Materials, EarlyView.
The electrochemical doping of redox homo‐ and copolymers containing triphenylamine (TPA) as redox‐active units is reported. Electrochemical crosslinking leads to films with tetraphenylbenzidine (TPB) crosslinking units. Advanced electrogravimetric tools are applied to get insights into their mixed ionic‐electronic conducting characteristics: anion ...
Claudia Malacrida   +5 more
wiley   +1 more source

Proximity Ferroelectricity in Compositionally Graded Structures

open access: yesAdvanced Electronic Materials, EarlyView.
We perform the finite element modeling of the polarization switching in the compositionally graded AlN‐Al1‐xScxN and ZnO‐Zn1‐xMgxO structures and reveal the switching of spontaneous polarization in the whole structure in all these systems. The coercive field to switch is significantly lower than the electric breakdown field of the unswitchable AlN and ...
Eugene A. Eliseev   +4 more
wiley   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash   +4 more
wiley   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

Advancing Energy Materials by In Situ Atomic Scale Methods

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss   +21 more
wiley   +1 more source

Universally Accurate or Specifically Inadequate? Stress‐Testing General Purpose Machine Learning Interatomic Potentials

open access: yesAdvanced Intelligent Discovery, EarlyView.
We investigate MACE‐MP‐0 and M3GNet, two general‐purpose machine learning potentials, in materials discovery and find that both generally yield reliable predictions. At the same time, both potentials show a bias towards overstabilizing high energy metastable states. We deduce a metric to quantify when these potentials are safe to use.
Konstantin S. Jakob   +2 more
wiley   +1 more source

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