Results 161 to 170 of about 2,067,234 (297)

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

Word-Level Motion Learning for Contactless QWERTY Typing with a Single Camera. [PDF]

Sensors (Basel)
Yoo SS, Lee HS.
europepmc   +1 more source

Ion‐Gating Reservoir Computing for Preprocessing‐Free Speech Recognition from Throat Vibrations

Advanced Electronic Materials, EarlyView.
This work presents a throat‐mounted mechanoelectric sensor integrated with an ion‐gel/graphene reservoir device for on‐device speech recognition. The system converts raw biomechanical vibrations into rich nonlinear current dynamics, enabling efficient classification through a simple linear readout. The approach highlights a compact and tunable physical‐
Daiki Nishioka, Akito Tateyama, Hina Kitano, Takashi Nakanishi, Kazuya Terabe, Takashi Tsuchiya   +5 more
wiley   +1 more source

Digital design and virtual simulation of sports bras based on TG3D-Nuno knitted fabric simulation. [PDF]

PLoS One
Tao L, Zhong A.
europepmc   +1 more source

VIRTUAL PROTOTYPING AT CERN [PDF]

Computing in High Energy Physics '95, 1996
openaire   +2 more sources

Creating Virtual Prototypes of Complex MEMS Transducers Using Reduced-Order Modelling Methods and VHDL-AMS

, 2006
Torsten Mähne, K. Kehr, A. Franke, J. Hauer, B. Schmidt   +4 more
semanticscholar   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

Editorial: Nanomaterial design and engineering for enhanced physical therapy modalities. [PDF]

Front Bioeng Biotechnol
Movileanu C.
europepmc   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source