Results 191 to 200 of about 2,255,413 (373)
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai+8 more
wiley +1 more source
OPERANT MEASUREMENT OF SUBJECTIVE VISUAL ACUITY IN NON‐VERBAL CHILDREN1 [PDF]
Joel Macht
openalex +1 more source
This study presents novel anti‐counterfeiting tags with multilevel security features that utilize additional disguise features. They combine luminescent nanosized Ln‐MOFs with conductive polymers to multifunctional mixed‐matrix membranes and powder composites. The materials exhibit visible/NIR emission and matrix‐based conductivity even as black bodies.
Moritz Maxeiner+9 more
wiley +1 more source
Objective determination of human visual acuity from the visual evoked potential [PDF]
Vernon L. Towle, M. Russell Harter
openalex +1 more source
Identification and Reversible Optical Switching of NV+ Centers in Diamond
NV+ centers in diamond are predicted to coexist with NV0 and NV– centers, but direct experimental confirmation remains challenging. Using positron annihilation spectroscopy with in situ light illumination, a charge transition NV+/0 is observed at 1.234(8) eV.
Marcel Dickmann+13 more
wiley +1 more source
How to measure distance visual acuity
Visual acuity (VA) is a measure of the ability of the eye to distinguish shapes and the details of objects at a given distance. It is important to assess VA in a consistent way in order to detect any changes in vision. One eye is tested at a time.
Janet Marsden , Sue Stevens , Anne Ebri
doaj
Retinal locus and acuity in visual information processing [PDF]
Charles W. Eriksen, Derek W. Schultz
openalex +1 more source
Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics
Rhombohedral GeSe is rationally designed with (GeSe)0.9(AgBiTe2)0.1‐1.5 mol.% SnSe, achieving a peak ZT of 1.31 at 623 K. Forming a composite with SnSe establishes interfaces with strong phonon scattering and weak electron scattering. Multiscale defects lead to an ultra‐low lattice thermal conductivity (0.26 W m−1 K−1), approaching the amorphous limit.
Min Zhang+14 more
wiley +1 more source