Results 151 to 160 of about 7,607,853 (297)

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

open access: yesAdvanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam   +10 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

Dynamically Actuated Reconfigurable Topographical Surface Enables Active Control of Implant‐Associated Infections

open access: yesAdvanced Functional Materials, EarlyView.
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash   +4 more
wiley   +1 more source

Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS

open access: yesAdvanced Functional Materials, EarlyView.
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae   +17 more
wiley   +1 more source

Exploring working memory: Interference with visual short-term memory

open access: yes, 2017
Alan Baddeley has an international reputation as an eminent scholar and pioneer in the field of human memory, and is principally known for the theory of working memory, devised with Graham Hitch.
Baddeley A., Logie R., Zucco G.
core  

Vector‐Field Control and Emergent Basal‐Plane Anisotropy of Magnetic Textures in Noncentrosymmetric (Fe0.63Ni0.3Pd0.07)3P

open access: yesAdvanced Functional Materials, EarlyView.
A field‐driven transition from chiral stripes to an achiral fan state is observed in a tetragonal magnet and linked to a temperature‐dependent rotation of the effective Dzyaloshinskii–Moriya interaction axis. This interplay generates pronounced in‐plane anisotropy and provides a new route for controlling chiral spin textures in noncentrosymmetric ...
Victor Ukleev   +19 more
wiley   +1 more source

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

open access: yesAdvanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung   +17 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim   +3 more
wiley   +1 more source

Electrical Tuning of Ferrimagnetic Spin Alignment Angle and Compensation Temperature in Pt/IrMn3/CoGd Multilayers

open access: yesAdvanced Functional Materials, EarlyView.
Spin‐orbit torque controls the Néel vector of antiferromagnetic IrMn3, which selectively exchange‐couples with spins of Co only in the ferrimagnetic CoGd. This selective interfacial pinning induces the non‐collinear spiral spin configuration, leading to a non‐uniform distribution of local compensation temperature along the film thickness, and enabling ...
Won‐Chang Choi   +8 more
wiley   +1 more source

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