Results 301 to 310 of about 5,094,043 (324)

The interpretation of radio-influence voltage profiles

Electric Power Systems Research, 1985
Abstract A method for obtaining a radio-influence voltage (RIV) versus applied voltage profile is described. Typical results are presented and suggestions are made for their interpretation. The pass/fail levels given by various national standards and methods for applying atmospheric corrections are discussed.
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Reevaluation of hydropathy profiles of voltage-gated ionic channels

Experientia, 1991
A reevaluation of the secondary structure of Na, Ca and K channel proteins led to the following results. Only three segments (S1, S5 and S6) of each repeat are sufficiently hydrophobic to be predicted as transmembrane helices, if a window of 19 amino acids is used.
A, Sawaryn, H, Drouin
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Holographic voltage profiling on 75nm gate architecture CMOS devices

Ultramicroscopy, 2003
Voltage profiles of the source-drain region of a CMOS transistor with 75nm gate architecture taken from an off-the-shelf Intel PIII processor are presented. The sample preparation using a dual beam system is discussed as well as details of the electron optical setup of the microscope.
Alexander E, Thesen, Bernhard G, Frost, David C, Joy   +2 more
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Capacitance-Voltage Profiling of Multilayer Semiconductor Structures

1991
C-V profiling has traditionally found its importance in the determination of semiconductor doping profiles and, more recently, to provide estimates of heterojunction band offsets [1]. It has been recognised [2] that a profile of the free electron concentration n(x) is obtained from C-V techniques rather than that of the doping profile Nd(x).
J. S. Rimmer, B. Hamilton, A. R. Peaker
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Doping profiles characterization in GaAs semi-insulating substrates using capacitance–voltage, conductance–voltage, and current–voltage measurements

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
An accurate doping profile extraction in devices fabricated in semi-insulating GaAs substrates is difficult. The conventional Schottky barrier diode C–V technique is prone to large errors caused by bias dependent series resistance, gate current conduction, deep-level traps, and breakdown of the depletion approximation.
K. Iniewski, M. Liu, C. A. T. Salama
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Improving the voltage profile of a medium voltage grid using distributed generation units

2013 15th European Conference on Power Electronics and Applications (EPE), 2013
In this paper the impact of photovoltaic (PV) system connected to the medium voltage distribution grid using three-phase three-level inverter and step-up transformer will be investigated. The PV inverter is capable to control active and reactive power independently.
Georgios Tsengenes, Georgios A. Adamidis, Athanasios D. Karlis   +2 more
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Smart batteries and lithium ion voltage profiles

The Twelfth Annual Battery Conference on Applications and Advances, 2002
This paper addresses how the smart battery system specifications facilitate battery interchangeability in the light of differences in battery chemistry. Specifically it addresses differences among Li-ion battery manufacturers as well as differences between nickel metal hydride and lithium ion batteries.
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Voltage profile improvement in distribution network by means of voltage regulators

2001
Poboljšanje naponskih prilika u distributivnoj mreži otoka Hvara ostvareno je pomoću regulatora napona. Padovi napona na dugačkim distributivnim vodovima hrvatskih otoka u posljednje vrijeme predstavljaju veliki pogonski problem. U radu se prikazuje teorijski i praktični pristup rješenju navedenog problema.
Sutlović, Elis, Žutobradić, Srđan, Majstrović, Matislav   +2 more
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Capacitance-Voltage and Drive-Level–Capacitance Profiling

2018
The capacitance–voltage (CV) and drive-level–capacitance-profiling (DLCP) techniques yield information about the density of states in, or near, the depletion region of a diode. This chapter explores the theoretical derivation, assumptions, strengths and limitations, application and analysis of these two related techniques, CV and DLCP. The CV technique
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Voltage Profile Enhancement Using FACTS Devices

2022
Akash Sharma, Rajive Tiwari
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