Results 141 to 150 of about 5,588,991 (291)

Dynamics of Leaky Integrate‐and‐Fire Neurons Based on Oxyvanite Memristors for Spiking Neural Networks

Advanced Intelligent Systems
Neuromorphic computing implemented with spiking neural networks (SNNs) based on volatile threshold switching is an energy‐efficient computing paradigm that may overcome future limitations of the von Neumann architecture.
Sujan Kumar Das, Sanjoy Kumar Nandi, Camilo Verbel Marquez, Armando Rúa, Mutsunori Uenuma, Shimul Kanti Nath, Shuo Zhang, Chun‐Ho Lin, Dewei Chu, Tom Ratcliff, Robert Glen Elliman   +10 more
doaj   +1 more source

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Integral representations of solutions of coercive solvable problems for the Laplace equation

Boundary Value Problems
Modeling of many stationary physical processes is reduced to the study of boundary value problems for elliptic equations. Starting with the works of A.V. Bitsadze and A.A. Samarskiy, well-posed, but not necessarily boundary value problems for the Laplace
Tynysbek Kal’menov
doaj   +1 more source

K2 of von Neumann regular rings

Journal of Pure and Applied Algebra, 1975
Dennis, R.Keith, Magid, Andy R.
openaire   +1 more source

Stochastic‐MTJ Sampler Arrays for In‐Array Monte–Carlo Estimation

Advanced Electronic Materials, EarlyView.
A low‐energy‐barrier magnetic tunnel junction array is operated as a probability‐domain sampler: each cell's random switching, programmed through a shared digital‐to‐analog converter, makes the per‐column multiply–accumulate an unbiased Monte–Carlo expectation estimator that returns both a mean and a calibrated uncertainty.
Ran Zhang, Nellie Laleni, Sina Ranjbar, Andreas Tsiougkos, Nandakishor Yadav, Vasilis Pavlidis, Thomas Kämpfe   +6 more
wiley   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

Álgebras de von Neumann - fatores [PDF]

, 2011
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro de Ciências Físicas e Matemáticas, Programa de Pós-Graduação em Matemática e Computação Científica, Florianópolis, 2011Dada uma álgebra de von Neumann M em L(H), onde L(H) é o espaço
Garcia, João Nilton
core  

Nonlinear Dynamics and Invariants of Motion in ReRAM Cells

Advanced Electronic Materials, EarlyView.
A second‐order cell, hosting one capacitor and two back‐to‐back ReRAMs, admits Invariants of Motion: its states lie on one‐dimensional manifolds at all times. The cell shows quiescent monostability or bistability, depending on the manifold index. At equilibrium, the capacitor voltage vanishes.
Mauro Di Marco, Mauro Forti, Luca Pancioni, Giacomo Innocenti, Alberto Tesi, Alon Ascoli   +5 more
wiley   +1 more source

Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors

Advanced Electronic Materials, EarlyView.
Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee, Dong Hyeop Shin, Seung Joo Myoung, Soohong Eo, Wonjung Kim, Seeun Lee, Changwook Kim, Junjong Lee, Yoon Jung Lee, Sung‐Jin Choi, Sungjun Kim, Dae Hwan Kim   +11 more
wiley   +1 more source

Dual‐Mode Optoelectronic Synapse Based on Ultrathin InxTiyO Films for In‐Sensor Neuromorphic Computing and Physical Image Encoding

Advanced Electronic Materials, EarlyView.
An ultrathin InxTiyO‐based optoelectronic synaptic device enables dual‐mode electrical and optical synaptic responses through charge‐trapping‐mediated conductance modulation. Multilevel conductance states further enable physical image encoding, converting visual information into spatial current distributions.
Chaerin Yu, Jung Wook Lim
wiley   +1 more source