Results 71 to 80 of about 16,929 (257)

Synergistic Spin‐Polarization and Single‐Atom Engineering in Magnetic Heterojunctions for Efficient Solar Water Splitting

open access: yesAdvanced Science, EarlyView.
High‐throughput screening led to the identification of 67 Z‐scheme heterojunctions (comprising 2D magnetic transition metal halides and non‐magnetic transition metal chalcogenides). For CrI3/MoTe2 and CrI3/WTe2, electronic structure analysis demonstrated that synergistic crystallographic point group and built‐in electric field effects generate a ...
Hongyang Ren   +8 more
wiley   +1 more source

Von Neumann Regularity of V-Rings with Artinian Primitive Factor Rings [PDF]

open access: yesProceedings of the American Mathematical Society, 1988
LetRRbe a ring whose right primitive factor rings are artinian. It is a known result that ifRRis von Neumann regular, thenRRis a rightVV-ring, that is, all simple rightRR-modules are injective. In the present work we prove that the converse holds.
openaire   +1 more source

Homological dimensions of the amalgamated duplication of a ring along a pure ideal [PDF]

open access: yes, 2009
The aim of this paper is to study the classical global and weak dimensions of the amalgamated duplication of a ring $R$ along a pure ideal $I$
Chhiti, Mohamed, Mahdou, Najib
core  

Ion Crowding Effect in Unilaterally Downsized Perovskite Memristors

open access: yesAdvanced Science, EarlyView.
The downscaling of perovskite memristors incorporating monocrystalline nanoplates is accompanied by an ion crowding effect, which greatly enhances the local electric field in the vicinity of electrode. The highly controlled crowding of anions and vacancies results in anisotropic switching characteristics as well as unique morphology modification ...
Conghui Tan   +11 more
wiley   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

open access: yesAdvanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal   +3 more
wiley   +1 more source

Using Dopants as Agents to Probe Key Electronic Properties of Organic Semiconductors

open access: yesAdvanced Electronic Materials, EarlyView.
Dopants are typically used in organic electronics to enhance conductivity, but here their potential is demonstrated as probes for fundamental material properties. By integrating experimental data and multiscale simulations, it is shown how dopant ionization and conductivity measurements enable accurate extraction of ionization potential and Coulomb ...
Artem Fediai   +3 more
wiley   +1 more source

Rings Whose Pure-Projective Modules Have Maximal or Minimal Projectivity Domain

open access: yesJournal of New Theory
In this study, we investigate the projectivity domain of pure-projective modules. A pure-projective module is called special-pure-projective (s-pure-projective) module if its projectivity domain contains only regular modules. First, we describe all rings
Zübeyir Türkoğlu
doaj   +1 more source

Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim   +3 more
wiley   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta   +9 more
wiley   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy   +2 more
wiley   +1 more source

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