Results 171 to 180 of about 6,655,493 (368)

Optical waves solutions for the perturbed Fokas–Lenells equation through two different methods

open access: gold, 2023
Karmina K. Ali   +3 more
openalex   +1 more source

Direct Evidence of Topological Dirac Fermions in a Low Carrier Density Correlated 5d Oxide

open access: yesAdvanced Functional Materials, EarlyView.
The 5d oxide BiRe2O6 is discovered as a low‐carrier‐density topological semimetal hosting symmetry‐protected Dirac fermions stabilized by nonsymmorphic symmetries. Angle‐resolved photoemission spectroscopy, quantum oscillations, and magnetotransport measurements reveal gapless Dirac cones, quasi‐2D Fermi surfaces, high carrier mobility, and a field ...
Premakumar Yanda   +11 more
wiley   +1 more source

Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn2PdIn

open access: yesAdvanced Functional Materials, EarlyView.
Mn2PdIn, a frustrated inverse Heusler alloy, showing electronic‐structure driven anomalous Hall effect with Weyl crossings, Fermi‐surface nesting and near‐zero magnetization ideal for low‐magnetization spintronics. Abstract Noncollinear magnets with near‐zero net magnetization and nontrivial bulk electronic topology hold significant promise for ...
Afsar Ahmed   +7 more
wiley   +1 more source

Reevaluating the Activity of ZIF‐8 Based FeNCs for Electrochemical Ammonia Production

open access: yesAdvanced Functional Materials, EarlyView.
Though receiving much attention, the field of electrochemical nitrogen reduction reaction (eNRR) to ammonia is marked by doubts about whether this reaction is possible in aqueous media. This work sheds light on this question for iron single‐atom on N‐doped carbon (FeNC) catalysts—a class of well‐known catalysts that is also worth testing for the sister
Caroline Schneider   +6 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

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