Results 111 to 120 of about 3,632,568 (255)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Wavelength-Dependent Ultrafast Charge Carrier Separation in the WO3/BiVO4 Coupled System [PDF]

open access: yes, 2017
Due to its ∼2.4 eV band gap, BiVO4 is a very promising photoanode material for harvesting the blue portion of the solar light for photoelectrochemical (PEC) water splitting applications.
P. V. Kamat   +31 more
core   +1 more source

Mimicking evasive behavior in wavelength‐dependent reconfigurable phototransistors with ultralow power consumption

open access: yesSmartMat
Retinal‐inspired synaptic phototransistors, which integrate light signal detection, preprocessing, and memory functions, show promising applications in artificial vision sensors.
He Shao   +9 more
doaj   +1 more source

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti   +16 more
wiley   +1 more source

Porphyrin-anthraquinone hybrids: wavelength dependent DNA photonucleases

open access: yes, 1997
Covalently-linked, bichromophoric systems comprising of a porphyrin donor and an anthraquinone acceptor are shown to exhibit wavelength dependent photonuclease ...
Arounaguiri, S.   +3 more
core   +1 more source

Wavelength‐Dependent Photobiomodulation Regulates Macrophage Polarization via Mitochondrial Dynamics and Metabolic Reprogramming

open access: yesAdvanced Science
Photobiomodulation (PBM) provides a non‐invasive means to regulate immune function, yet its clinical translation is hindered by a lack of mechanistic links between light parameters and biological outcomes.
Qiusheng Shi   +12 more
doaj   +1 more source

A MEMS Variable Optical Attenuator with Ultra-Low Wavelength-Dependent Loss and Polarization-Dependent Loss

open access: yesMicromachines, 2018
Applications in broadband optical fiber communication system need variable optical attenuators (VOAs) with low wavelength-dependent loss (WDL). Based on analysis on the dispersion of the optical system of a MEMS-based VOA, we provide a method to reduce ...
Huangqingbo Sun   +3 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Wavelength-dependent fuzzy models for IR attenuation in fog [PDF]

open access: yesMemoirs of the Scientific Sections of the Romanian Academy, 2013
We propose a fuzzy logic-based wavelength-dependent model of IR attenuation in fog to unify the double-exponential family of models proposed by Nadeem et al.
Silviu Ioan Bejinariu   +2 more
doaj  

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

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