Results 161 to 170 of about 721,188 (387)
Basis of wavelets and atomic decompositions of $H\sp 1({\bf R}\sp n)$ and $H\sp 1({\bf R}\sp n\times {\bf R}\sp n)$ [PDF]
José Antonio Facenda Aguirre+3 more
openalex +1 more source
The ultraselective H2S detection of the ZIF‐L/SnS2 heterostructure is demonstrated. The introduction of 2‐dimensional (2D) breathable ZIF‐L results in a substantial increase in H2S selectivity attributable to the molecular sieving effect, which impedes the permeation of gases with large kinetic diameters and high polarity.
Soo Min Lee+7 more
wiley +1 more source
Wavelet-like transforms in the auditory system of the bat [PDF]
Tim Haresign+2 more
openalex +1 more source
This study reveals that higher shell S coordination can effectively modulate the spin state of FeN4 site via long‐range electronic interactions, giving rise to the oriented generation of singlet oxygen from peroxymonosulfate activation. Abstract Precise manipulation of coordination structure of single‐atom sites and establishment of schematic ...
Liang Zhang+8 more
wiley +1 more source
Wavelet analysis of transient-evoked otoacoustic emissions [PDF]
Jeffrey D. Travis, R. Joe Thornhill
openalex +1 more source
Wearable Haptic Feedback Interfaces for Augmenting Human Touch
The wearable haptic feedback interfaces enhance user experience in gaming, social media, biomedical instrumentation, and robotics by generating tactile sensations. This review discusses and categorizes current haptic feedback interfaces into force, thermal, and electrotactile stimulation‐based haptic feedback interfaces, elucidating their current ...
Shubham Patel+3 more
wiley +1 more source
This study demonstrates that in sputter‐deposited Tb3Fe5O12 (TbIG)/nonmagnetic metal (NM) heterostructures, the interfacial Dzyaloshinskii–Moriya Interaction (DMI) originates at the TbIG/NM interface. Furthermore, measurements suggest a significant interfacial DMI arising from a second non‐local interface, created by inserting a Cu spacer layer between
Stefano Fedel+6 more
wiley +1 more source
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo+16 more
wiley +1 more source
Pointwise smoothness, two-microlocalization and wavelet coefficients
Stéphane Jaffard
openalex +2 more sources