Results 111 to 120 of about 84,796 (282)

Coupled Fixed Point Theorems for a Pair of Weakly Compatible Maps along with CLRg Property in Fuzzy Metric Spaces

open access: yesJournal of Applied Mathematics, 2012
The aim of this paper is to extend the notions of E.A. property and CLRg property for coupled mappings and use these notions to generalize the recent results of Xin-Qi Hu (2011). The main result is supported by a suitable example.
Manish Jain   +3 more
doaj   +1 more source

Common Fixed Point Theorems for Compatible and Weakly Compatible Maps in G-Metric Spaces

open access: yesApplied Mathematics, 2012
In this paper first we prove common fixed point theorems for compatible and weakly compatible maps. Secondly, we prove common fixed point theorems for weakly compatible maps along with property (E.A.) and (CLRg) property respectively.
Asha Rani   +3 more
openaire   +2 more sources

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

open access: yesAdvanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato   +10 more
wiley   +1 more source

SOME FIXED POINT THEOREMS FOR WEAKLY COMPATIBLE MAPPINGS SATISFYING AN IMPLICIT RELATION

open access: yesTaiwanese Journal of Mathematics, 2009
In this paper, we prove a common fixed point theorem for weakly compatible mappings satisfying an implicit relation. Our theorem generalizes many fixed point theorems.
Altun, Ishak, Turkoglu, Duran
openaire   +3 more sources

Coexisting Rashba/Dresselhaus Spin Splitting in Solution‐Processed Bournonite Films Using Circular Photogalvanic Effect

open access: yesAdvanced Functional Materials, EarlyView.
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell   +5 more
wiley   +1 more source

Common fixed points for two pairs of selfmaps satisfying certain contraction condition in $b$-metric spaces

open access: yesRatio Mathematica
This study introduces generalized contraction for two pairs of selfmaps in complete $b$-metric spaces, and it then establishes the existence of common fixed points under the presumptions that these two pairs of maps are weakly compatible and satisfy the ...
Bhanu Chander   +2 more
doaj   +1 more source

Existence of unique common solution to the system of non-linear integral equations via fixed point results in incomplete metric spaces

open access: yesJournal of Inequalities and Applications, 2017
In this article, we apply common fixed point results in incomplete metric spaces to examine the existence of a unique common solution for the following systems of Urysohn integral equations and Volterra-Hammerstein integral equations, respectively: u ( s
Mian Bahadur Zada   +2 more
doaj   +1 more source

An alternative approach to “fixed point theorems for occasionally weakly compatible mappings”

open access: yesJournal of the Egyptian Mathematical Society, 2014
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Gopal, Dhananjay, Patel, Deepesh Kumar
openaire   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

Gate-tunable near-field localization switching in black phosphorus via hybrid plasmonic excitation [PDF]

open access: yesAPL Electronic Devices
Integrated photonics increasingly demands ultracompact, low-power, and highly tunable platforms for actively reconfigurable field control. Although black phosphorus (BP) provides strong electrostatic tunability and anisotropic plasmonic dispersion ...
S. Ramezanpour, A. S. Helmy
doaj   +1 more source

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