Results 61 to 70 of about 49,338 (313)

A contrastive analysis on the causes of two regional snowstorm processes influenced by the southern branch trough in Hunan in early 2022

open access: yesAtmospheric Science Letters
In early 2022, there were four low‐temperature weather processes with rain and snow in Hunan Province, China. Two processes occurred on January 28–29 (referred to as the “0128” process) and February 6–7 (referred to as the “0206” process), and they have ...
Yan Hu   +5 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

The COST 731 Action : a review on uncertainty propagation in advanced hydro-meteorological forecast systems

open access: yes, 2010
Quantifying uncertainty in flood forecasting is a difficult task, given the multiple and strongly nonlinear model components involved in such a system.
Massimiliano Zappa   +15 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

A global fuel characteristic model and dataset for wildfire prediction [PDF]

open access: yesBiogeosciences
Effective wildfire management and prevention strategies depend on accurate forecasts of fire occurrence and propagation. Fuel load and fuel moisture content are essential variables for forecasting fire occurrence, and whilst existing operational systems ...
J. R. McNorton, F. Di Giuseppe
doaj   +1 more source

Adversarial Observations in Weather Forecasting

open access: yesProceedings of the 2025 ACM SIGSAC Conference on Computer and Communications Security
AI-based systems, such as Google's GenCast, have recently redefined the state of the art in weather forecasting, offering more accurate and timely predictions of both everyday weather and extreme events. While these systems are on the verge of replacing traditional meteorological methods, they also introduce new vulnerabilities into the forecasting ...
Erik Imgrund   +2 more
openaire   +3 more sources

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Concatenating weather monitoring and forecast: the WxFUSION concept

open access: yes, 2012
The meteorological network of observation and prediction continuously delivers an enormous amount of various atmospheric parameters. In particular in the area of an aerodrome the observation density is typically higher than on average.
Tafferner, Arnold   +2 more
core  

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