Results 221 to 230 of about 58,292 (312)

Wafer‐Scale Split‐Channel a‐IGZO TFTs for Hump‐Free and Stress‐Robust Operation

open access: yesAdvanced Electronic Materials, EarlyView.
This work identifies plasma‐induced edge region oxygen vacancies as the true origin of the hump in a‐IGZO TFTs and introduces a wafer‐scale split‐channel architecture that fully suppresses this instability. The simple mask‐level design achieves hump‐free and stress‐robust operation with significantly enhanced current drivability, offering a practical ...
So‐Jeong Park   +8 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel   +6 more
wiley   +1 more source

Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics

open access: yesAdvanced Electronic Materials, EarlyView.
Compliant bioelectronic systems enable continuous monitoring of chronic disease through soft, stretchable materials and tissue‐conformal designs that support stable electrophysiological, mechanical, and biochemical sensing. Integration of diverse sensing modalities with thoughtful material selection, device architectures, and advanced fabrication ...
Han Kim   +7 more
wiley   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

open access: yesAdvanced Electronic Materials, EarlyView.
Room‐temperature sliding ferroelectricity in γ‐InSe enables a two‐dimensional FeFET with a 6.8 V memory window, above 104 conductance modulation, longer than 10‐years retention and above 103 cycles fatigue resistance. An ultrathin (4.8 nm) γ‐InSe ferroelectric tunnel junction exhibits reversible high/low resistance switching with TER of 105 at room ...
Yue Li   +7 more
wiley   +1 more source

Gaps and ways forward in atmospheric blocking and extreme weather research. [PDF]

open access: yesNat Commun
Wang L   +9 more
europepmc   +1 more source

Stretchable Energy Storage with Eutectic Gallium Indium Alloy

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
A highly stretchable liquid metal‐based electrode is developed via a one‐step process, retaining conductivity and capacitance after mechanical deformation up to 900% strain. The stretchable all‐solid‐state device provides a areal energy density of 43 µWh cm⁻2 after 150% strain.
Adit Gupta   +6 more
wiley   +1 more source

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