Results 141 to 150 of about 5,137,929 (150)
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Hole initiated impact ionization in wide band gap semiconductors
Journal of Applied Physics, 1999Stephen Goodnick, Wolfgang Schattke
exaly
Impact ionization rate calculations in wide band gap semiconductors
Journal of Applied Physics, 1999Richard Abram, S Brand
exaly
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Microelectronic Engineering, 2018Fabrizio Roccaforte +2 more
exaly
Effective mass approximation for two extreme semiconductors: Band gap of PbS and CuBr nanoparticles
Journal of Applied Physics, 2004Karuna Kar Nanda
exaly
A method to determine deep level profiles in highly compensated, wide band gap semiconductors
Journal of Applied Physics, 2005S A Ringel
exaly
Hydrogen and doping issues in wide band gap semiconductors
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2000exaly
Charged defects in highly emissive organic wide-band-gap semiconductors
Applied Physics Letters, 2000exaly

