Results 101 to 110 of about 132,013 (294)

New Efficient D‐π‐A and A‐π‐A Structured Type I Radical Photoinitiators for Additive Manufacturing Nanomaterials Preparation

open access: yesAdvanced Materials Technologies, EarlyView.
Groundbreaking advancements are discovered in 3D printing with new type‐I radical photoinitiators, including 1,1‐dimethoxy‐1‐phenylpropan‐2‐one. These innovative compounds, effective under visible light, enhance photopolymerization of acrylates and methacrylates, facilitating the creation of efficient nanocomposites and unlock the future of polymer ...
Andrzej Świeży   +5 more
wiley   +1 more source

Shuttle system ascent aerodynamic and plume heating [PDF]

open access: yes, 1985
The shuttle program provided a challenge to the aerothermodynamicist due to the complexity of the flow field around the vehicle during ascent, since the configuration causes multiple shock interactions between the elements.
Foster, L. D.   +2 more
core   +1 more source

Mechanoluminescence of Bi‐Activated NaYGeO4 Polycrystals and 3D Printed Scaffolds in the NUV/Blue and NIR Spectral Range

open access: yesAdvanced Optical Materials, EarlyView.
NUV/Blue and NIR emitting mechanoluminescent (ML) materials based on a Bi‐doped germanate compound (NYGOBx) are reported. 3D‐printing is used to fabricate complex scaffold devices from this material, suggested for use as mechanically‐activated light sources for functional illumination.
Hossein Ebrahim Hosseini   +5 more
wiley   +1 more source

Adaptive-wall wind-tunnel research at NASA-Ames Research Center [PDF]

open access: yes
Adaptive wall wind tunnel research is summarized. Small scale two and three dimensional wind tunnel experiments and numerical experiments with a three dimensional adaptive wall simulator are included.
Mendoza, J. P., Schairer, E. T.
core   +1 more source

BP/MoS₂ Van Der Waals Heterojunctions for Self‐Powered Photoconduction

open access: yesAdvanced Optical Materials, EarlyView.
A multilayer black phosphorus (BP)/monolayer MoS₂ vertical heterostructure is investigated using four‐probe measurements. The device exhibits rectifying behavior, dominant n‐type transport, low contact resistance, and an interface barrier of 68 meV.
Adolfo Mazzotti   +9 more
wiley   +1 more source

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