Results 271 to 280 of about 564,776 (415)

2D ferroelectric AgInP2Se6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade−1

open access: yesAdvanced Electronic Materials, EarlyView.
The room temperature ferroelectricity of two‐dimensional (2D) AgInP2Se6 is achieved, which is further integrated with MoS2 channel into ultra‐steep negative capacitance transistors (NC‐FETs) for low‐power electronic applications. Due to the negative capacitance effect of AgInP2Se6 during the polarization reversal process, the transistor breaks the ...
Yujue Yang   +8 more
wiley   +1 more source

Wind Tunnel Tests of Evolved Mars Tumbleweed Concepts [PDF]

open access: green, 2006
Jeffrey Antol   +3 more
openalex   +1 more source

Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Devices based on ferroelectric hafnium oxide have spurred interest in a wide range of nanoelectronic applications. This review focuses on the advantages and challenges of these devices, including non‐volatile memories, neuromorphic devices, sensors, actuators, and RF devices.
David Lehninger   +8 more
wiley   +1 more source

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