Results 291 to 300 of about 346,306 (411)

Learning aerodynamics for the control of flying humanoid robots. [PDF]

Commun Eng
Paolino A, Nava G, Di Natale F, Bergonti F, Vanteddu PR, Grassi D, Riccobene L, Zanotti A, Tognaccini R, Iaccarino G, Pucci D.   +10 more
europepmc   +1 more source

Wind Tunnel Tests of Bridges

Journal of the Japan Society for Aeronautical and Space Sciences, 1974
openaire   +2 more sources

On Blockage Corrections for Two-dimensional Wind Tunnel Tests Using the Wall-pressure Signature Method

, 1986
Steven R. Allmaras
openalex   +1 more source

Unsteady Galloping Force and Response Prediction of a Slender Prism Using a Novel Wind Tunnel Test Technique

, 2017
Zengshun Chen, K.T. Tse, K.C.S. Kwok, Ahsan Kareem   +3 more
openalex   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices

Advanced Science, EarlyView.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz, Matilde Siviero, Lucas Lesourd, Eric Frayssinet, Sebastien Chenot, Petter Hofverberg, Sullivan Marafico, Marie Vidal, Maxime Hugues   +8 more
wiley   +1 more source

Effect of Random Base Vibrations on the Performance of Piezoelectric Wind Energy Harvesters. [PDF]

Micromachines (Basel)
Pasetto A, Tonan M, Bottin M, Doria A.
europepmc   +1 more source

Tests in the Ames 40- by 80-foot Wind Tunnel of Two Airplane Models Having Aspect Ratio 2 Trapezoidal Wings of Taper Ratios 0.33 and 0.20

, 1953
Ralph W Franks
openalex   +1 more source

Gallium Nitride Semiconductor Resonant Tunneling Transistor

Advanced Science, EarlyView.
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Fang Liu, JunShuai Xue, GuanLin Wu, JinYuan Yuan, JiaJia Yao, RenJie Liu, Zhuang Guo, ZeHui Li, HaoRan Hu, WenBo Sun, Cheng Zhao, ChenKai Zhang, XinYan Liu, Kai Zhang, JinCheng Zhang, Yue Hao   +15 more
wiley   +1 more source

Research on the influence of different heat release rates on the throttling effect and critical wind speed in tunnel engineering. [PDF]

Sci Rep
Luo C, Wang H, Wang Q.
europepmc   +1 more source

DNA‐Guided Robust Single‐Protein Electronic Readout

Advanced Science, EarlyView.
Electronic measurements of single proteins can reveal fundamental insights into their structure, dynamics, and interactions, but reproducibility is severely limited by the intrinsic structural heterogeneity of proteins combined with uncontrolled molecular orientation and electrode contact geometries.
Ziyi Ju, Zhaoxiang Deng, Yueqi Li, Jinghong Li   +3 more
wiley   +1 more source