Results 291 to 300 of about 564,776 (415)

Reconfigurable Mixed‐Dimensional Transistor With Semimetal CNT Contacts

Advanced Electronic Materials, EarlyView.
The semimetal carbon nanotubes (CNT) contacts are used to fabricate reconfigurable WSe2 transistors for the first time, which have excellent electrical performance with a high on/off ratio of over 107 as a field effect transistor (FET) and an ultra‐high rectification ratio of over 106 as a diode.
Xuanzhang Li, Yuheng Li, Zhen Mei, Liang Liang, Qunqing Li, Shoushan Fan, Yang Wei   +6 more
wiley   +1 more source

Application of a 20kW Arc-Heated Wind Tunnel to Evaluation Tests of Wall Catalysis.

, 2003
Makoto Hirakawa, Ken-ichi Abe, Michio Nishida, Ken ichiro Takeishi, Masaaki Matsuura   +4 more
openalex   +2 more sources

The impact of various calcium ion sources on the curing efficacy of MICP. [PDF]

Sci Rep
Tao H, Jiang P, Qu J, Huang Y.
europepmc   +1 more source

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization

Advanced Electronic Materials, EarlyView.
The defects in the charge‐trapping layer are believed to be responsible for endurance degradation in organic transistor nonvolatile memory (ONVM). The ONVM employing thermally treated n‐type semiconductor as the charge‐storage layer can maintain prolonged stable endurance for up to 104 cycles through annealing the charge‐trapping layer, paving the way ...
Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu   +8 more
wiley   +1 more source

NUMERICAL MODELLING OF LOCAL WIND IN COMPLEX TERRAIN AND ITS VERIFICATION BY A WIND TUNNEL TEST

, 2003
Takeshi Ishihara, Atsushi YAMAGUCHI, Yozo Fujino   +2 more
openalex   +2 more sources

Experimental study into the effects of pitch and coning angles on the flight performance of the natural samara. [PDF]

R Soc Open Sci
Jung BK, Rezgui D.
europepmc   +1 more source

Resistance Drift of Phase Change Materials Beyond the Power Law

Advanced Electronic Materials, EarlyView.
The timedependent resistance of phase change materials is important for their application as electronic memory. Here, resistance measurements of melt‐quenched germanium telluride from nanoseconds to minutes are presented. By going far beyond the usually considered measurement regime, deviations from the ubiquitous power law behavior are observed, that ...
Jakob Ballmaier, Sebastian Walfort, Martin Salinga   +2 more
wiley   +1 more source

Impact of Aedes aegypti V1016I and F1534C knockdown resistance genotypes on operational interventions. [PDF]

Sci Rep
Estep AS, Sanscrainte ND, Farooq M, Lucas KJ, Heinig RL, Norris EJ, Becnel JJ.   +6 more
europepmc   +1 more source

Tunneling Dielectric Thickness‐Dependent Behaviors in Transistors Based on Sandwiched Small Molecule and Insulating Layer Structures

Advanced Electronic Materials, EarlyView.
Three different types of electrical properties are demonstrated in the devices by controlling the thickness of the parylene (TDL). The thinnest parylene TDL (≈15 nm) shows conventional p‐type transistor behavior, while the ≈45 nm thickness exhibits negative differential transconductance (NDT) and current saturation behavior.
Dong Hyun Lee, Yunchae Jeon, Junhwan Choi, Hocheon Yoo   +3 more
wiley   +1 more source

EXAMINATION ON THE INFLUENCE OF THE DEVELOPMENT OF A HIGH-RISE BUILDING ON AIR TEMPERATURE DISTRIBUTION BY MEANS OF FLOOR-HEATED WIND TUNNEL TEST

, 2004
Yasunobu Ashie, Seong-Hwan Yoon
openalex   +2 more sources