Results 51 to 60 of about 5,836 (267)

Photoconductivity‐Driven Quantum Efficiency Gain in Inorganic Ruddlesden‐Popper Layered Cs2PbBr2I2 Perovskite Photodetector for Visible Light Detection

Advanced Functional Materials, EarlyView.
Rational halogen mixing strategy was employed to shift the bandgap of Cs2PbBr2I2 from ultraviolet to visible region, enabling first realization of a visible‐light photodetector with this 2D layered Ruddlesden‐Popper perovskite material. Under illumination, light‐induced internal field forms and drives trap‐mediated persistent photoconductivity ...
Md Fahim Al Fattah, Asif Abdullah Khan, Saikiran Khamgaonkar, Majid Haji Bagheri, Danyah Khan, Md Rasidul Islam, Mahmoud Almadoun, Aixi Pan, Alexander Li, Marwa Abd‐Ellah, Vivek Maheshwari, Dayan Ban   +11 more
wiley   +1 more source

Lithium Intercalation in the Anisotropic Van Der Waals Semiconductor CrSBr

Advanced Functional Materials, EarlyView.
We report the lithium intercalation in the layered van der Waals crystal CrSBr, revealing strongly anisotropic ion‐migration dynamics. Optical and electrical characterization of exfoliated CrSBr shows lithium diffusion coefficients that differ by more than an order of magnitude along a‐ and b‐directions, consistent with molecular dynamics simulations ...
Kseniia Mosina, Aljoscha Söll, Jiří Šturala, Martin Veselý, Petr Levinsky, Ondřej Kaman, Florian Dirnberger, Giuliana Materzanini, Nicola Marzari, Gian‐Marco Rignanese, Borna Radatović, Vlastimil Mazánek, David Sedmidubský, Zdeněk Sofer   +13 more
wiley   +1 more source

Testing of a standard model in the VTI's large-subsonic wind-tunnel facility to establish users' confidence [PDF]

FME Transactions, 2014
A necessity to test a standard model testing for establishing confidence in the wind-tunnel flow quality and the validity of the test-data has been recognized in the Experimental Aerodynamics Laboratory of the Military Technical Institute (VTI) in ...
Ocokoljić Goran, Damljanović Dijana, Rašuo Boško, Isaković Jovan   +3 more
doaj  

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

Advanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji, Zi'Ang Gao, Shiva Prasad Poudel, Rui‐Qi Cao, Tianzhe Chen, Luxin Li, Chong Liu, Salvador Barraza‐Lopez, Stuart S. P. Parkin, Kai Chang   +9 more
wiley   +1 more source

Suppression of Photo‐Mediated Traps in Integrated Organic Photovoltaic–Photodetector Devices via N‐Type Self‐Assembly‐Driven Interfacial Engineering

Advanced Functional Materials, EarlyView.
Conventional unstable electron transport layers (ETLs) limit self‐powered organic sensors. This work resolves this by developing a n‐type self‐assembled monolayer (SAM), “3‐PAPh”. This SAM forms a chemically stable and structurally ordered interface that fundamentally suppresses defect formation.
Ohhyun Kwon, Jae Hoon Son, Tae Hyuk Kim, Gyeong Min Lee, Seunghyun Oh, Gayoung Ham, Min Jong Lee, Sang Heon Lee, Seon Joong Kim, Hyojung Cha, Han Young Woo, Jae Won Shim   +11 more
wiley   +1 more source

Near‐Infrared Light‐Programmable Negative Differential Transconductance in Organic Electrochemical Transistors for Reconfigurable Logic

Advanced Functional Materials, EarlyView.
Organic electrochemical transistors based on a Near‐Infrared (NIR)‐responsive polymer p(C4DPP‐T) and iodide electrolyte exhibit optically programmable negative differential transconductance. NIR illumination triggers an iodine‐mediated redox process, enabling a transition from binary to ternary conductance states within a single‐layer device.
Debdatta Panigrahi, Christina J. Kousseff, Aristea Pavlou, Zeinab Hamid, Iain McCulloch, Fabrizio Torricelli, Paul W. M. Blom, Paschalis Gkoupidenis   +7 more
wiley   +1 more source

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

Advanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo, Junsung Byeon, Jungmoon Lim, Sohyeon Park, Sungsan Kang, Byeongchan Kim, Gyuhwi Jeong, Haerim Kim, Bongjun Kim, SeungNam Cha, Sangyeon Pak   +10 more
wiley   +1 more source

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

Advanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann, Hanglin He, Marko Mladenović, Till Zellweger, Kevin Portner, Klemens Bauer, Guillaume Bellec, Mathieu Luisier, Alexandros Emboras   +8 more
wiley   +1 more source

Ultrastable Photoactive Halide Perovskite Nanocrystal‐Sensitized SnO2 Nanorods for Room‐Temperature NO2 Detection

Advanced Functional Materials, EarlyView.
ABSTRACT Metal oxide (MOx)‐based NO2 gas sensors typically require high temperatures or ultraviolet light, limiting their practical use. To enable visible‐light activation at room temperature, efficient and stable photosensitizers should be integrated with nanostructured MOx hosts.
Yeonji Yuk, Dokyum Kim, Jun‐Cheol Park, Yoonsung Jung, Inhyeok Oh, Donghyeon Lee, Yejoon Kim, Ji‐Eun Yeo, Young Min Song, Chang‐Lyoul Lee, Sanghan Lee   +10 more
wiley   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

Advanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda, Thor Hvid‐Olsen, Christina Hoegfeldt, Anshu Gupta, Alessandro Palliotto, Fardin Ghaffari‐Tabrizi, Maja A. Dunstan, Kasper S. Pedersen, Dae‐Sung Park, Damon J. Carrad, Thomas Sand Jespersen, Felix Trier   +11 more
wiley   +1 more source