Results 171 to 180 of about 202,716 (303)

Beyond Earth: Resilience of Quasi‐2D Perovskite Solar Cells in Space

open access: yesAdvanced Materials, EarlyView.
In the article (DOI: 10.1002/adma.202520433), Christoph Putz and co‐workers demonstrate rigid quasi‐2D perovskite solar cells operating in low Earth orbit, delivering stable power for more than 100 days under real‐space conditions. In‐orbit performance is correlated with extensive ground‐based thermal and proton‐irradiation studies on rigid and ...
Christoph Putz   +17 more
wiley   +1 more source

Meissner Effect and Nonreciprocal Charge Transport in Non‐Topological 1T‐CrTe2/FeTe Heterostructures

open access: yesAdvanced Materials, EarlyView.
This work demonstrates interface‐induced superconductivity (Tc ∼12 K) with a robust Meissner effect and pronounced nonreciprocal transport in epitaxial 1T‐CrTe2/FeTe heterostructures, where 1T‐CrTe2 is a 2D ferromagnet, and FeTe is an antiferromagnetic metal.
Zi‐Jie Yan   +13 more
wiley   +1 more source

Materials and System Design for Self‐Decision Bioelectronic Systems

open access: yesAdvanced Materials, EarlyView.
This review highlights how self‐decision bioelectronic systems integrate sensing, computation, and therapy into autonomous, closed‐loop platforms that continuously monitor and treat diseases, marking a major step toward intelligent, self‐regulating healthcare technologies.
Qiankun Zeng   +9 more
wiley   +1 more source

Signatures of Edge States in Antiferromagnetic Van der Waals Josephson Junctions

open access: yesAdvanced Materials, EarlyView.
ABSTRACT The combination of superconductivity and magnetic textures leads to unconventional superconducting phenomena, including new correlated and topological phases. Van der Waals (vdW) materials emerge as a versatile platform for exploring the interplay between these two competing orders.
Celia González‐Sánchez   +10 more
wiley   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

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