Results 211 to 220 of about 2,530,585 (292)

Controllable Cascade Aggregation Ion Programmed Nanomachines and Simple Isolation Enable Tumor‐Derived Small Extracellular Vesicles Detection for Enhanced Breast Cancer Assessment

Advanced Science, EarlyView.
This study developed a convenient, enzyme‐free detection platform based on controllable aggregation ion nanomachines. Its favorable anti‐interference capacity and high sensitivity meet the detection requirements for clinical samples processed via a simple filtration method within 10 min.
Zhihao Zhang, Zijing Liu, Xiangyue Meng, Pengjun Jiang, Jie Qu, Yu Jiang, Binxu Qiu, Jie Chen, Piaopiao Chen   +8 more
wiley   +1 more source

Security, Privacy, and Linear Function Retrieval in Combinatorial Multi-Access Coded Caching with Private Caches. [PDF]

Entropy (Basel)
Chinnapadamala M, Rajan BS.
europepmc   +1 more source

Stabilising the Lattice Oxygen Oxidation Mechanism Through Iridium Single Atoms in Chromium‐Doped Cobalt Iron Layered Double Hydroxides

Advanced Science, EarlyView.
Iridium single atoms and Cr doping synergistically activate and stabilise the lattice oxygen oxidation mechanism in CoFe layered double hydroxides. Electronic modulation enhances metal–oxygen covalency, suppresses over‐oxidation, and enables durable oxygen evolution, delivering high‐performance anion exchange membrane water electrolysis with ...
Parisa Eskandari, Shujie Zhou, Jodie Yuwono, Yufei Zhao, Hanyu Xu, Zhihong Tian, Jingwen Ba, Ming Zhang, Bernt Johannessen, Thanh Son Bui, Richard F. Webster, Jing Chu, Xunyu Lu, Rose Amal   +13 more
wiley   +1 more source

Energy Efficiency Maximization for ME-IRS-Enabled Secure Communications. [PDF]

Entropy (Basel)
Liu C, Dong L, Li Y, Cheng W.
europepmc   +1 more source

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Simultaneous transmission of information and key exchange using the same photonic quantum states. [PDF]

Sci Adv
Pan D, Liu YC, Niu P, Zhang H, Zhang F, Wang M, Song XT, Chen X, Zheng C, Long GL.   +9 more
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

Advanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg, Andreas W. Erhardt, Adrian Hochgesang, John Mohanraj, Lys Sprenger, Sahar Salehi, Christopher R. McNeill, Mukundan Thelakkat   +7 more
wiley   +1 more source

Robust Beamfocusing for Secure NFC with Imperfect CSI. [PDF]

Sensors (Basel)
Chen W, Wei Z, Yang Z.
europepmc   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source