Results 211 to 220 of about 1,014,531 (302)

Highly‐Emissive Organic Photovoltaics Approaching Theoretical Limit Voltage and Enabling Multifunctional Energy‐Harvesting Displays

open access: yesAdvanced Materials, EarlyView.
A highly‐emissive organic photovoltaic employs donor–acceptor pairs with alternately localized frontier molecular orbitals, preserving high triplet energies and small reorganization energies to suppress non‐radiative recombination. As a result, it exhibits a high open‐circuit voltage approaching the Shockley–Queisser limit and a high ...
Qing‐Jun Shui   +7 more
wiley   +1 more source

Factorizing lexical relatedness [PDF]

open access: yes, 2010
Spencer, Andrew
core  

Plasmonic Nanomachines: Creating Local Potential Gradients and Motions

open access: yesAdvanced Materials, EarlyView.
Plasmonic nanomachines can generate optical, thermal, and chemical potential gradients to drive directional rectilinear, rotational, and twisting motions at the nanometer scale. The integration of multimodal plasmonic forces with functional materials and programmed structural distortions enables precise spatiotemporal actuation, thereby providing a ...
Yoonhee Kim   +3 more
wiley   +1 more source

Nanomaterial Integration at Liquid–Liquid Interfaces for Green Catalysis

open access: yesAdvanced Materials, EarlyView.
Functional nanomaterials assembled at liquid–liquid interfaces create dual‐role platforms serving as emulsion stabilizers and catalytic sites, offering enhanced reaction kinetics with improved catalyst recovery and recyclability. This review examines design strategies, structure‐performance relationships, and industrial implementation prospects of ...
Bokgi Seo   +6 more
wiley   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

open access: yesAdvanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

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