Results 201 to 210 of about 5,643,683 (390)

Ab Initio Study on 3D Anisotropic Ferroelectric Switching Mechanism and Coercive Field in HfO2 and ZrO2

open access: yesAdvanced Functional Materials, EarlyView.
This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye   +6 more
wiley   +1 more source

Working Memory 2.0

open access: yesNeuron, 2018
E. Miller, Mikael Lundqvist, A. Bastos
semanticscholar   +1 more source

A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Artificial neurons created using CMOS technology often require a large number of transistors and capacitors. This study introduces an artificial thalamic neuron that employs only five CMOS compatible ferroelectric transistors. The manufactured thalamic neuron demonstrates leaky integrate‐and‐fire‐or‐burst (LIFB) functionalities, featuring self ...
Andreas Grenmyr   +7 more
wiley   +1 more source

Cerebellar and subcortical contributions to working memory manipulation. [PDF]

open access: yesCommun Biol
Tan JB   +9 more
europepmc   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

open access: yesAdvanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai   +8 more
wiley   +1 more source

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