Results 141 to 150 of about 9,708 (287)

Optimization of x-ray sources for proximity lithography produced by a high average power Nd:glass laser

, 1995
P. M. Celliers, L. DaSilva, C. Brent Dane   +2 more
openalex   +2 more sources

Fabrication of X-ray Grating Using X-ray Lithography Technique [PDF]

, 2008
Daiji Noda, Hiroshi Tsujii, Naoki Takahashi, Tadashi Hattori   +3 more
openalex   +1 more source

Below 1% Reflectance for Black GaAs Surface Prepared by Facile Two‐Step Wet Chemical Treatment: Hydrogen Peroxide and Water

Advanced Photonics Research, EarlyView.
Black GaAs surface which decreases light reflectivity forms in surprising way when GaAs is kept first in hot hydrogen peroxide solution and then in hot‐water solution. To increase performance of many photonic devices (e.g., solar cell, light emitting diode (LED), photodetector), it is essential to decrease light reflection at device interfaces ...
Zahra Jahanshah Rad, Johanna Laaksonen, Valtteri Alitupa, Mikko Miettinen, Kari Iltanen, Juha‐Pekka Lehtiö, Sari Granroth, Ilari Angervo, Marko Punkkinen, Risto Punkkinen, Mikhail Kuzmin, Ermei Mäkilä, Pekka Laukkanen, Petriina Paturi, Kalevi Kokko, Sami Vuori, Mika Lastusaari, Harishchandra Singh, Marko Huttula, Manvedra Narayan Singh, Antti Tukiainen, Heidi Tuorila, Helmer Piirilä, Jukka Viheriälä, Mircea Guina, Jekaterina Kozlova, Mihkel Rähn, Aile Tamm   +27 more
wiley   +1 more source

Reflection grating fabrication for the Rockets for Extended-source X-ray Spectroscopy. [PDF]

Exp Astron (Dordr)
Miles DM, McCurdy R, Labella M, McEntaffer RL, Grisé F, McCoy J, Tutt JH.   +6 more
europepmc   +1 more source

Advances in X-ray Lithography at ASET.

, 2000
Katsumi Suzuki, Yasuji Matsui
openalex   +2 more sources

CMOS‐Compatible Short‐Wave Infrared Linear Arrays of Ge‐on‐Si Avalanche Photodiodes

Advanced Photonics Research, EarlyView.
The fabrication and characterization of a new type of surface‐illuminated Si‐based avalanche photodiode array operating in the short‐wave infrared region using germanium as the absorber and silicon as the multiplier is reported. The demonstration of an avalanche gain of 24 at a temperature of 378 K allows the devices to operate in outdoor environments.
Mrudul Modak, Muhammad M. A. Mirza, Xin Yi, Qingyu Tian, Lisa Saalbach, Fiona Fleming, Jaroslaw Kirdoda, Derek C. S. Dumas, Xiao Jin, Charlie Smith, Levi Tegg, Sima Aminorroaya Yamini, John P. R. David, Douglas J. Paul, Ross W. Millar, Gerald S. Buller   +15 more
wiley   +1 more source

Advances in GaN‐on‐Glass for Optoelectronic Devices: Progress in Epitaxial Growth, Device Integration, and Applications

Advanced Photonics Research, EarlyView.
This review presents recent advances in GaN‐on‐glass technology, with a focus on epitaxial growth strategies, preorienting layers, and device integration. Innovations in material processing have been shown to enhance structural quality, orientation control, and scalability, highlighting their significance in light‐emitting diodes, photodetectors, and ...
Jungwook Min, Kwangwook Park
wiley   +1 more source

Review of Directed Self-Assembly Material, Processing, and Application in Advanced Lithography and Patterning. [PDF]

Micromachines (Basel)
Cheng X, Liang D, Jiang M, Sha Y, Liu X, Liu J, Cao Q, Shi J.   +7 more
europepmc   +1 more source

Storage ring design for x-ray lithography

, 1983
A. van Steenbergen, W. D. Grobman
openalex   +1 more source

Development of Microconnectors Using 3 Dimensional Micromachining Based on Deep X-ray Lithography

, 2000
Tsuyoshi Haga, Hiroshi Okuyama, Yoshihiro Hirata, Hiroshi Takada   +3 more
openalex   +2 more sources