Results 201 to 210 of about 9,708 (287)

High Linearity and Symmetry Ferroelectric Artificial Neuromorphic Devices Based on Ultrathin Indium‐Tin‐Oxide Channels

open access: yesAdvanced Electronic Materials, EarlyView.
Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang   +8 more
wiley   +1 more source

On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez   +14 more
wiley   +1 more source

Strain-Driven Dewetting and Interdiffusion in SiGe Thin Films on SOI for CMOS-Compatible Nanostructures. [PDF]

open access: yesNanomaterials (Basel)
Freddi S   +7 more
europepmc   +1 more source

Electronic Nanomaterials for Plants: A Review on Current Advances and Future Prospects

open access: yesAdvanced Electronic Materials, EarlyView.
Global food security faces mounting challenges from climate change and rapid population growth. This review highlights the pivotal role of electronic nanomaterials–including metals, metal oxides, and carbon‐based structures–in enhancing plant photosynthesis, nutrient uptake, and stress resilience. Furthermore, it explores how emerging platforms such as
Ciro Allará   +8 more
wiley   +1 more source

Local Fermi Level Engineering in 2D‐MoS2 Realized via Microcontact Printing of Self‐Assembled Monolayers for Next‐Generation Electronics

open access: yesAdvanced Electronic Materials, EarlyView.
2D transition metal dichalcogenides (TMDCs) are promising for next‐gen optoelectronics. Their sensitivity to surroundings affects their electronic behavior. Substrate surfaces are chemically engineered to locally dope and adjust the properties of single layer MoS2 FETs employing self‐assembled monolayers (SAMs) arranged in patterns.
Sarah Grützmacher   +4 more
wiley   +1 more source

Highly Efficient Planar Hot Electron Emitters Based on Ultrathin Pyrolyzed Polymer Films. [PDF]

open access: yesACS Appl Mater Interfaces
Herdl F   +10 more
europepmc   +1 more source

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