Results 201 to 210 of about 9,708 (287)
Grayscale Lithography and a Brief Introduction to Other Widely Used Lithographic Methods: A State-of-the-Art Review. [PDF]
Khonina SN, Kazanskiy NL, Butt MA.
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When Top-Down Meets Bottom-Up: EUV and X-ray Interference Lithography for Sub-20-nm Features
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Ultrathin ITO and ferroelectric HZO are used to fabricate synaptic transistors. The device has a great on/off ratio ≈108 with a memory window of 1.73 V, successfully simulates the characteristics of the human brain, and achieves good linearity of 0.45 for potential and 0.73 for depression and low asymmetry of 0.89.
Siwei Wang+8 more
wiley +1 more source
On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez+14 more
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Strain-Driven Dewetting and Interdiffusion in SiGe Thin Films on SOI for CMOS-Compatible Nanostructures. [PDF]
Freddi S+7 more
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Electronic Nanomaterials for Plants: A Review on Current Advances and Future Prospects
Global food security faces mounting challenges from climate change and rapid population growth. This review highlights the pivotal role of electronic nanomaterials–including metals, metal oxides, and carbon‐based structures–in enhancing plant photosynthesis, nutrient uptake, and stress resilience. Furthermore, it explores how emerging platforms such as
Ciro Allará+8 more
wiley +1 more source
Direct nanopatterning of complex 3D surfaces and self-aligned superlattices via molecular-beam holographic lithography. [PDF]
Zeng S, Tian T, Oh J, Lin ZH, Shih CJ.
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2D transition metal dichalcogenides (TMDCs) are promising for next‐gen optoelectronics. Their sensitivity to surroundings affects their electronic behavior. Substrate surfaces are chemically engineered to locally dope and adjust the properties of single layer MoS2 FETs employing self‐assembled monolayers (SAMs) arranged in patterns.
Sarah Grützmacher+4 more
wiley +1 more source
Highly Efficient Planar Hot Electron Emitters Based on Ultrathin Pyrolyzed Polymer Films. [PDF]
Herdl F+10 more
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Application of ELN-200 in Deep X-ray Lithography
V. Nazmov, B. G. Goldenberg
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