Results 71 to 80 of about 15,490 (252)

Polarization Sensitivity of Chiral Manganese Halide Scintillators Enables High‐Resolution X‐Ray Imaging

open access: yesAdvanced Functional Materials, EarlyView.
Highly luminescent chiral manganese halide crystals are synthesized using chiral ligands, and they exhibit dissymmetry factors up to 1.4 × 10−2 and show X‐ray detection scintillation capability with a light yield of 43 380 photons/MeV and a low detection limit of 0.05198 µGyair·s−1.
Yue Han   +9 more
wiley   +1 more source

The Czech Contribution to Future Large X-Ray Astronomy Telescopes: Recent Progress

open access: yesActa Polytechnica, 2013
We briefly review the recent status of the Czech contribution to future space X-ray astronomy missions with emphasis on the development of new technologies and test samples of X-ray mirrors with precise surfaces based on new materials and alternative ...
René Hudec   +6 more
doaj  

Precision Manufacturing in China of Replication Mandrels for Ni-Based Monolithic Wolter-I X-ray Mirror Mandrels

open access: yesAerospace
The X-ray satellite “Einstein Probe” of the Chinese Academy of Sciences (CAS) was successfully launched on 9 January 2024 at 15:03 Beijing Time from the Xichang Satellite Launch Center in China with a “Long March-2C” rocket.
Jiadai Xue   +14 more
doaj   +1 more source

Si‐Doped Nanocrystalline Diamond as Highly Sensitive Luminescence Thermometer for the Physiological Temperature Range

open access: yesAdvanced Functional Materials, EarlyView.
In this work, diamonds with negative charged silicon‐vacancy (SiV−) centers have been designed for use as thermometers in biomedical applications. Multiparametric analysis of the emission characteristics of the SiV− centers provides extraordinary sensitivity for temperature detection in the physiological temperature range.
María Gragera   +6 more
wiley   +1 more source

Interface‐Defect Synergy Engineering of Amorphous Ga2O3 for Voltage‐Tunable Dual‐Mode Optoelectronic Devices: Self‐Powered Imaging and Neuromorphic Vision

open access: yesAdvanced Functional Materials, EarlyView.
An interface‐defect co‐engineered strategy enables bias‐programmable integration of self‐powered photodetection and low‐power synaptic functionalities within a single‐material amorphous Ga2O3 device. This design achieves reversible switching via voltage modulation, supporting high‐contrast imaging and visual memory, and demonstrates a neuromorphic ...
Wanjun Li   +13 more
wiley   +1 more source

Prism-based scanning X-ray microscopy

open access: yesIUCrJ, 2021
Kenneth Evans-Lutterodt
doaj   +1 more source

Development of Multifunctional Hierarchically Restructured Antibacterial Neural Interfacing Electrodes via Plasma‐Enhanced Atomic Layer Deposition of Zinc Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Next‐generation implantable neural‐interfacing devices are increasingly constrained by the coupled demands of electrode miniaturization, electrochemical performance, and implantation infection risk. Femtosecond laser–based hierarchical surface restructuring (HSR) technology has emerged as a scalable, manufacturing‐compatible platform for ...
Henna Khosla   +12 more
wiley   +1 more source

X-ray mirrors with sub-nanometre figure errors obtained by differential deposition of thin WSi2 films. [PDF]

open access: yesJ Synchrotron Radiat, 2023
Bras P   +5 more
europepmc   +1 more source

Dopant Distribution in Ga‐Implanted CdO—A Correlative Microscopy and Molecular Dynamics Study

open access: yesAdvanced Functional Materials, EarlyView.
This work demonstrates that ion implantation offset angle could modulate carrier concentration and mobility in cadmium oxide thin films. Combining correlative microscopy workflow and molecular dynamics simulations, this study reveals the control of interfacial cluster density with tailoring implantation angles, and the optimum offset angle that ...
Morvarid Ghorbani   +7 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon   +9 more
wiley   +1 more source

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