Results 311 to 320 of about 3,130,340 (413)

Investigation of Opto‐magnetic Memory Effects in Antiferromagnetic CuMnAs Using Ultrafast Heat Dynamics and Quench Switching

open access: yesAdvanced Electronic Materials, EarlyView.
Using a pair of excitation laser pulses, this work examines functionalities of an antiferromagnet memory favorable for information processing, readily incorporating transient heat dynamics at sub‐nanosecond times, reminiscing the short‐term memory, and long‐term magnetic memory.
Jan Zubáč   +12 more
wiley   +1 more source

Mechanism of Fixed Pattern Noise of Micro‐Channel Plate Focusing on Cross‐Section of Single Channel

open access: yesAdvanced Electronic Materials, EarlyView.
The movement of secondary electrons to the phosphor screen after avalanche in microchannel plate (MCP) is influenced by the single channel cross‐sectional shape. The secondary electron beam emitted from MCP channels with different cross‐sectional shapes affects the energy and position upon striking the phosphor screen, directly impacting FPN (Fixed ...
Dongyu Jiang   +9 more
wiley   +1 more source

Correction: Cerebral Haemodynamic Assessment Following Sport-related Concussion (Mild Traumatic Brain Injury) in Youth and Amateur Rugby Union Players. [PDF]

open access: yesSports Med Open
Jones B   +11 more
europepmc   +1 more source

Lanthanide‐Doped Ga2O3: A Route to Bandgap Engineering for Ultraviolet Detection

open access: yesAdvanced Electronic Materials, EarlyView.
Substitutional doping with lanthanide elements under charge balance conditions can effectively tune the bandgap of gallium oxide and has the potential to achieve a low background current in ultraviolet detection. Abstract The demand for next‐generation wide bandgap semiconductors is driven by applications such as solar‐blind ultraviolet detection and ...
Shunze Huang   +6 more
wiley   +1 more source

Crabbed Age and Youth

open access: green, 1964
Robert Louis Stevenson
openalex   +1 more source

Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2

open access: yesAdvanced Electronic Materials, EarlyView.
A MoS2‐based transistor, featuring bilayer MoS2 connected to Cu‐intercalated bilayer MoS2 electrodes is designed. At a supply voltage of 0.6 V, the contact resistance is 16.7 Ω µm (zigzag) and 30.0 Ω µm (armchair), approaching or even surpassing the 30 Ω µm quantum limit for single‐layer materials.
Huan Wang   +4 more
wiley   +1 more source

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