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Thermal Expansion of Yttria‐Stabilized Zirconia

Journal of the American Ceramic Society, 1964
The thermal expansion of yttria-stabilized zirconia was measured in air and in a high-oxygen atmosphere. Room temperature-to-1000 deg C expansion measurements were made in an automatic recording dilatometer. Measurements above 1000 deg C were made in an oxide induction furnace and the change in length of the specimen was measured with telemicroscopes ...
T. H. NIELSEN, M. H. LEIPOLD
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Ultrasonic attenuation in yttria-stabilized zirconia

Physica B: Condensed Matter, 1999
Abstract The acoustic attenuation at 10 MHz in yttria-stabilized zirconia (ZrO2(Y)) was measured at temperatures between 300 and 600 K. The attenuation curve showed a relaxation peak, from which the activation energy was estimated to be 0.7±0.07 eV , in good agreement with the value obtained from dielectric constant of 0.66±0.07 eV ...
Kenta Kirimoto   +2 more
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Yttria stabilized zirconia reinforced hydroxyapatite coatings

Surface and Coatings Technology, 2000
The low bonding strength between the coating layer and the substrate of plasma sprayed hydroxyapatite (HA) coatings is the weakness in its application as a bio-medical prosthesis. In this study, 30 wt.% of yttria (8 wt.%) stabilized zirconia (YSZ) has been used to reinforce the hydroxyapatite coatings and to improve the bond strength of the HA coatings.
Lei Fu, Khiam Aik Khor, Joo Peng Lim
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Yttria Stabilized Zirconia Hollow Fiber Membranes

Journal of the American Ceramic Society, 2006
Yttria‐stabilized zirconia (YSZ) hollow fiber membranes have been developed by a combined phase inversion and sintering method. An organic binder solution (dope) containing suspended YSZ particles is spun to form a hollow fiber precursor, which is then sintered at elevated temperatures.
Lihong Liu, Xiaoyao Tan, Shaomin Liu
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Vanadia reactions with yttria stabilized zirconia

Journal of Applied Physics, 1988
The reaction of vanadia films with yttria stabilized single-crystal cubic and polycrystalline cubic-tetragonal zirconias was studied using Rutherford backscattering (RBS) and x-ray diffraction, with some selected depth profiling studies. Vandium on zirconia readily oxidizes at 500 °C to form vanadia films.
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Refractive index of cubic zirconia stabilized with yttria

Applied Optics, 1982
The optical transmission and indices of refraction for the cubic isomorph of ZrO(2) stabilized with 12.0-mol % Y(2)O(3) were measured at various temperatures and for a range of wavelengths from 0.36 to 5.1 microm. Index data to +/-5 x 10(-5) were fitted to a three-term Sellmeier equation. The value of N(D) = 2.15847.
D L, Wood, K, Nassau
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Nanoindentation examination of yttria-stabilized zirconia (YSZ) crystal

Journal of Alloys and Compounds, 2007
Abstract The paper clarifies the specific mechanical properties of single crystal YSZ through applying the nanoindentation examination and the finite element analysis with theoretical ultrasonic measurements. The obtained results demonstrate that the lack of precise determination of the Poisson's ratio results in the significant discrepancy between ...
Masaki Fujikane   +4 more
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Thin-film yttria-stabilized tetragonal zirconia

Solid State Ionics, 1996
Abstract Yttria-stabilized zirconia thin films deposited by radio-frequency sputtering from a 3 mol% Y 2 O 3 ZrO 2 target show primarily tetragonal orientation. Annealing in air further reduces the fraction of monoclinic phase and enhances the crystallinity of the tetragonal phase.
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Surface cleaning and characterization of yttria‐stabilized zirconia

Surface and Interface Analysis, 2002
Abstract Cleaning substrate surfaces and checking the effectiveness of the cleaning method are two very important aspects of reliable surface analysis. The absence of a cleaning process leading to an yttria‐stabilized zirconia (YSZ) surface that is free of contaminants and of unchanged structure has inspired us to investigate a new ...
Ridder, de, M.   +2 more
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Electrostatic dispersion of yttria-stabilized zirconia

Powder Technology, 1987
Abstract These results merely indicate that the isoelectric point for this powder is substantially different than that commonly accepted for ‘stabilized zirconia’. It is recommended that this difference be taken into account in designing process systems for the material.
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