Results 171 to 180 of about 531,568 (306)

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

open access: yesAdvanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun   +7 more
wiley   +1 more source

Coexistence of ferroelectricity and altermagnetism in wurtzite vanadium oxide: a first-principles study. [PDF]

open access: yesRSC Adv
Zaman A   +7 more
europepmc   +1 more source

Novel Functional Materials via 3D Printing by Vat Photopolymerization

open access: yesAdvanced Functional Materials, EarlyView.
This Perspective systematically analyzes strategies for incorporating functionalities into 3D‐printed materials via Vat Photopolymerization (VP). It explores the spectrum of achievable functionalities in recently reported novel materials—such as conductive, energy‐storing, biodegradable, stimuli‐responsive, self‐healing, shape‐memory, biomaterials, and
Sergey S. Nechausov   +3 more
wiley   +1 more source

Atomic‐Level Ionic Displacement Polarization Enhanced Piezocatalytic Hydrogen Evolution in Covalent Organic Frameworks

open access: yesAdvanced Functional Materials, EarlyView.
Two isomorphic COFs were synthesized and compared, including an amphoteric COF (SQ‐TAPT) and a neutral COF (PDA‐TAPT). The ionic bonds in SQ‐TAPT introduce more Born effective charges, thereby enhancing its ionic displacement polarization. Experimental and theoretical calculations demonstrated that SQ‐TAPT exhibited higher polarity and stronger ...
Ge Yan   +12 more
wiley   +1 more source

A Quasi-Resonant System for High-Frequency Trans-Spinal Magnetic Stimulation (HF-TSMS). [PDF]

open access: yesIEEE Trans Biomed Eng
Marturano F   +5 more
europepmc   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav   +6 more
wiley   +1 more source

Voltage‐Gated Dedoping of n‐Doped Poly(benzodifurandione) as an Interfacial Protective Mechanism in Electrochromic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electrochromic polymer stability under overpotential is improved by inserting an ultrathin, transparent n‐doped poly(benzodifurandione) interlayer between indium tin oxide and a poly(3,4‐propylenedioxythiophene)‐based electrochromic polymer. The interlayer supports rapid switching at operating bias, then becomes resistive near +0.8 V to suppress excess
Priyanka Rout   +4 more
wiley   +1 more source

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