Results 211 to 220 of about 49,759 (310)

Quantum Size Effect Synergizes Space-Limited Domain Action for Advanced Aqueous Zinc-Iodine Batteries. [PDF]

open access: yesAdv Mater
Li S   +11 more
europepmc   +1 more source

Enhancing Interfacial Dioxygen Bridging Dynamics of Waste‐Derived Cathode Catalysts for Augmented High‐Rate Performance in Li‐O2 Batteries

open access: yesAdvanced Science, EarlyView.
This study fabricates Fine Slag/Ti4O7@TiC hybrids with interfacial dioxygen bridge coupling to optimize oxygen redox dynamics in lithium‐oxygen batteries (LOBs). Lattice distortion from oxygen vacancies and inherent charge repulsion of Ti‐O‐C interfacial coupling reconstruct and refine the surface coordination environment.
Jixiong Zhang   +6 more
wiley   +1 more source

A Functionality‐Graded Cathode Electrolyte Interphase Enables Ultra‐Long Cycling Stability in Aqueous Zn–Mn Batteries

open access: yesAdvanced Science, EarlyView.
Through the interfacial reaction of KH2PO4, a functionally graded CEI with hydrated, organic, and inorganic layers is constructed. This suppresses interfacial water corrosion, mitigates volume stress, and promotes charge carrier transport, achieving superior battery stability.
Kaisheng Sun   +7 more
wiley   +1 more source

Ultra‐Thin Hybrid Ion Exchange Interlayer for High Performance Aqueous Zn Metal Batteries

open access: yesAdvanced Science, EarlyView.
An ultra‐thin SPEEK/FCD ion‐exchange interlayer modulates the Zn2+ solvation environment (–SO3−), provides ion‐exchange pathways that homoginized the Zn2+ flux, and via F‐rich chemistry forms in situ ZnF2 that suppresses parasitics and stabilizes the interface; its integrity relieves interfacial stress.
Tong Yang   +11 more
wiley   +1 more source

Dendrochronological monitoring of air pollution in the Ghent canal area (Belgium) [PDF]

open access: yes, 2007
Beeckman, Hans   +4 more
core  

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

open access: yesAdvanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren   +8 more
wiley   +1 more source

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