Results 211 to 220 of about 35,202 (297)

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

Wetting and Interaction of Titanium Melt with Calcium Titanate. [PDF]

open access: yesMaterials (Basel)
Mamaeva A   +6 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

open access: yesAdvanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol   +7 more
wiley   +1 more source

The Effect of ZrO<sub>2</sub> Addition and Thermal Treatment on the Microstructure and Mechanical Properties of Aluminum Metal Matrix Composites (AMMCs). [PDF]

open access: yesMaterials (Basel)
Rosales-Cadena I   +7 more
europepmc   +1 more source

Capacitive Pixelated CMOS Electronic Nose

open access: yesAdvanced Electronic Materials, EarlyView.
A 1024‐pixel CMOS capacitive E‐nose with inkjet‐printed MOFs and polymer layers yields gas‐specific capacitance fingerprints under humid conditions, discriminating toluene from 2‐butanone at low power. ABSTRACT Although some of the human senses can nowadays be replaced by low‐cost electronic sensors such as microphones and image sensors, a compact low ...
M. A. Basyooni‐M. Kabatas   +7 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

open access: yesAdvanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

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