Results 81 to 90 of about 40,475 (293)

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon   +7 more
wiley   +1 more source

Iodine Promoted Ultralow Zn Nucleation Overpotential and Zn-Rich Cathode for Low-Cost, Fast-Production and High-Energy Density Anode-Free Zn-Iodine Batteries

open access: yesNano-Micro Letters, 2022
The anode-free design is a promising strategy to increase the energy density of aqueous Zn metal batteries (AZMBs). However, the scarcity of Zn-rich cathodes and the rapid loss of limited Zn greatly hinder their commercial applications.
Yixiang Zhang   +7 more
doaj   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong   +6 more
wiley   +1 more source

Magnetic field-enabled ultrahigh-rate Zn metal anodes

open access: yesMaterials Today Energy
Aqueous Zn-based flow batteries receive tremendous attention toward future grid-scale energy storage, but the uncontrollable dendrite growth and limited plating current density at the Zn anode severely hinder their application prospects. Herein, we realize non-dendritic Zn growth at an ultrahigh current density of 100 mA cm-2 via the application of an ...
Yizhou Wang   +10 more
openaire   +2 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

open access: yesAdvanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu   +5 more
wiley   +1 more source

Realizing a dendrite-free metallic-potassium anode using reactive prewetting chemistry

open access: yeseScience
Potassium metal batteries (PMBs) have become a paramount alternative energy storage technology to lithium-ion batteries, due to their low cost and potential energy density.
Lu-Kang Zhao   +6 more
doaj   +1 more source

Engineering Intelligent Graphene Oxide‐Cellulose Membranes: Suppressing Thermal Runaway for a Safer Aqueous Zinc‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A novel thermos‐responsive hydroxypropyl cellulose/graphene oxide (HPC/GO) composite membrane is fabricated for reversible temperature‐gated ion transport in aqueous zinc‐ion batteries. Enabled by LCST‐driven structural transition, unimpeded ion diffusion at room temperature delivers high capacity, while elevated temperature suppresses transport; full ...
Xueli Bi   +9 more
wiley   +1 more source

Electrochemical Cells with Intermediate Capacitor Elements

open access: yes, 2015
Our goal is to electronically regulate electrochemical cells. For this, we introduced a third element, called the gate, which was placed between the cathode and the anode electrodes of the cell.
Grebel, Haim, Patel, Akshat
core   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim   +6 more
wiley   +1 more source

Development of Prototype Pixellated PIN CdZnTe Detectors [PDF]

open access: yes, 1998
We report initial results from the design and evaluation of two pixellated PIN Cadmium Zinc Telluride detectors and an ASIC-based readout system. The prototype imaging PIN detectors consist of 4X4 1.5 mm square indium anode contacts with 0.2 mm spacing ...
Bloser, P.   +5 more
core   +3 more sources

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