Results 141 to 150 of about 326,977 (199)
Zn-based seed priming enhances drought resistance during germination of <i>Lespedeza potaninii</i>: physiological and transcriptomic insights. [PDF]
PeerJHuo XW +9 more
europepmc +1 more source
Drinking Water Treatment Using PES/ZnO Mixed Matrix Membranes: Enhanced Antifouling Performance and Rejection at Low Nanoparticle Loadings. [PDF]
ACS OmegaSilva VB +5 more
europepmc +1 more source
The Photocatalytic Activity of Photoresponsive Silver Nanoparticle/Zinc Oxide Composite Thin Films with Unprecedently Elevated Quantities of Silver. [PDF]
Nanomaterials (Basel)Daniel LS +6 more
europepmc +1 more source
Some of the next articles are maybe not open access.
Related searches:
Related searches:
Homoepitaxial growth of ZnO nanostructures from bulk ZnO
Journal of Colloid and Interface Science, 2021Material formation mechanisms and their selective realization must be well understood for the development of new materials for advanced technologies. Since nanomaterials demonstrate higher specific surface energies compared to their corresponding bulk materials, the homoepitaxial growth of nanomaterials on bulk materials is not thermodynamically ...
Jang, Hyunseok +5 more
openaire +3 more sources
High-mobility ZnVxOy/ZnO conduction path in ZnO/V/ZnO multilayer structure
Journal of Applied Physics, 2021In this study, a 300 °C-annealed 3 × 4 V/ZnO multilayer structure demonstrates the lowest resistivity (3.82 × 10−3 Ω cm) and the highest mobility (18 cm2/V s) among the studied V/ZnO multilayer structures. By measuring the energy bandgap (Eg), work function (Φ), and electron affinity (χ) by ultraviolet photoelectron spectroscopy and photoluminescence ...
B. J. Li +6 more
openaire +1 more source
The Journal of Physical Chemistry B, 2004
ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off ...
Josh, Goldberger +3 more
openaire +2 more sources
ZnO nanowire field-effect transistors (FETs) were fabricated and studied in vacuum and a variety of ambient gases from 5 to 300 K. In air, these n-type nanowire transistors have among the highest mobilities yet reported for ZnO FETs (mu(e) = 13 +/- 5 cm(2) V(-1) s(-1)), with carrier concentrations averaging 5.2 +/- 2.5 x 10(17) cm(-3) and on-off ...
Josh, Goldberger +3 more
openaire +2 more sources
Nanoscale, 2011
The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO
Vanmaekelbergh, D.A.M., van Vugt, L.K.
openaire +3 more sources
The pathway towards the realization of optical solid-state lasers was gradual and slow. After Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for the first solid state laser device to see the light. Not much later, the first semiconductor laser was demonstrated and lasing in the near UV spectral range from ZnO
Vanmaekelbergh, D.A.M., van Vugt, L.K.
openaire +3 more sources
The Journal of Chemical Physics, 1998
Ab initio electronic structure calculations are performed to support and to help interpret the experimental work reported in the preceding manuscript. The coupled cluster singles and doubles [CCSD(T)] approach, in conjunction with a large basis set, is used to compute spectroscopic constants for the X 1Σ+ and Π3 states of ZnO and the X 2Σ+ state of ZnO−
Charles W. Bauschlicher, Harry Partridge
openaire +1 more source
Ab initio electronic structure calculations are performed to support and to help interpret the experimental work reported in the preceding manuscript. The coupled cluster singles and doubles [CCSD(T)] approach, in conjunction with a large basis set, is used to compute spectroscopic constants for the X 1Σ+ and Π3 states of ZnO and the X 2Σ+ state of ZnO−
Charles W. Bauschlicher, Harry Partridge
openaire +1 more source