Results 281 to 290 of about 13,337 (301)
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Fabrication of ZnO nanowires and nanorods
Physica E: Low-dimensional Systems and Nanostructures, 2012Abstract In this study, we focused on the fabrication of two types of ZnO nanostructures, nanorods and nanowires, using different techniques. ZnO nanowires were fabricated by cathodically induced sol–gel electrodeposition using an anodic aluminum oxide (AAO) template. ZnO nanowires were approximately 65 nm in diameter and 10 μm in length.
Sadullah Öztürk +3 more
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Preparation and characterization of ZnO nanowires
Physica E: Low-dimensional Systems and Nanostructures, 2004Abstract We have successfully synthesized self-organized zinc oxide nanowires on a Cu metalized silicon substrate by a modified reactive evaporation method by using a newly designed substrate holder. Characterizations were carried out by X-ray diffraction, scanning electron microscopy and photoluminescence measurements. Typical diameter and length of
K Yamamoto, K Nagasawa, T Ohmori
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Diffusion thermopower in ZnO nanowires
AIP Conference Proceedings, 2014Low temperature acoustic phonon limited diffusion thermopower (Sd) in wurtzite ZnO nanowires is studied considering inelasticity of the scattering. An expression for scattering rate due to piezoelectric (PZ) acoustic phonon coupling is given. Sd calculated in elastic approximation, used in literature, is found to overestimate.
S. M. Galagali, N. S. Sankeshwar
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Tuning the growth of ZnO nanowires
Physica B: Condensed Matter, 2011Abstract ZnO nanowires (NWs) with different diameters were obtained by controlling the particles of ZnO sub-layer (SL) exploring hydrothermal method; the diameter of the epitaxial NWs could be tuned from 60 to 146 nm when using SL with a thickness of 70 nm. The thickness of the SL would influence the orientation of the NWs.
Z. Guo +8 more
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IEEE Transactions on Electron Devices, 2011
Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM)
null Yen-De Chiang +7 more
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Single-ZnO-nanowire (NW) memory based on resistive switching is demonstrated for the first time. The NW memory is stable, rewritable, and nonvolatile with on/off ratio up to 7.7 × 105. The O vacancies at the surfaces of ZnO NWs and around the interface of Ti/ZnO NWs observed using X-ray phototelectron spectroscopy, transmission electron microscopy (TEM)
null Yen-De Chiang +7 more
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p‐Type Conduction Characteristics of Lithium‐Doped ZnO Nanowires
Advanced Materials, 2011Seungnam Cha +2 more
exaly
Piezo-potential enhanced photocatalytic degradation of organic dye using ZnO nanowires
Nano Energy, 2015Xinyu Xue, Weili Zang, Lili Xing
exaly
UV-Enhanced NO2Gas Sensing Properties of SnO2-Core/ZnO-Shell Nanowires at Room Temperature
ACS Applied Materials & Interfaces, 2013Sunghoon Park, Soyeon An, Chongmu Lee
exaly
Fabrication of gas sensor based on p-type ZnO nanoparticles and n-type ZnO nanowires
Sensors and Actuators B: Chemical, 2013Cheng-Liang Hsu +2 more
exaly

