Results 161 to 170 of about 2,041 (224)
Zn Vacancy Formation Energy and Diffusion Coefficient of CVT ZnO Crystals in the Sub-Surface Micron Region. [PDF]
Sci Rep, 2018 Parmar NS, Boatner LA, Lynn KG, Choi JW.
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Analysis on the energetics, magnetism and electronic properties in a 45° ZnO grain boundary doped with Gd. [PDF]
RSC Adv, 2018 Sasikala Devi AA, Roqan IS.
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Effect of Annealing Temperature on ECD Grown Hexagonal-Plane Zinc Oxide. [PDF]
Materials (Basel), 2018 Sucharitakul S, Panyathip R, Choopun S.
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Degradation phenomena of ZnO varistors
Physica Status Solidi (a), 1981The dc degradation behaviour of ZnO varistors as a function of the variables current, temperature, and time is investigated. The degradation rate is phenomenologically presented by an equation reflecting the observed aging behaviour in dependence on the influencing variables.
W. Moldenhauer +4 more
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Microchemistry of ZnO Varistors
Proceedings, annual meeting, Electron Microscopy Society of America, 1992ZnO varistors are made by mixing semiconducting ZnO powder with powders of other metal oxides e.g. Bi2O3, Sb2O3, CoO, MnO2, NiO, Cr2O3, SiO2 etc., followed by conventional pressing and sintering. The non-linear I-V characteristics of ZnO varistors result from the unique properties that the grain boundaries acquire as a result of dopant distribution ...
K. K. Soni +4 more
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Journal of the American Ceramic Society, 1987
The varistor properties were examined in porous ZnO. The sample used contained no dopants such as Bi 2 O 3 or Pr 6 O 11 , which are usually considered to be useful in ...
Satoru Fujitsu +2 more
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The varistor properties were examined in porous ZnO. The sample used contained no dopants such as Bi 2 O 3 or Pr 6 O 11 , which are usually considered to be useful in ...
Satoru Fujitsu +2 more
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Journal of Physics: Condensed Matter, 1993
Among the mechanisms suggested to account for degradation of varistor materials, ion migration has strong support. Mobile, positively charged ions in the depletion layer would be the key element in degradation. In this context, the authors discuss the consequences of an electrical stressing on the current-temperature characteristic of a comment ...
M S Castro, M A Benavente, C M Aldao
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Among the mechanisms suggested to account for degradation of varistor materials, ion migration has strong support. Mobile, positively charged ions in the depletion layer would be the key element in degradation. In this context, the authors discuss the consequences of an electrical stressing on the current-temperature characteristic of a comment ...
M S Castro, M A Benavente, C M Aldao
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Thermal breakdown in ZnO-varistor ceramics
Physica Status Solidi (a), 1980Thermal breakdowns representing an essential mechanism for the lifetime limitation of ZnO-varistor ceramics are characterized with respect to the parameters of the breakdown point (especially breakdown temperature Tb) (for 21 °C as ambient temperature: Tb = 174 °C).
W. Brückner, W . Moldenhauer, D. Hinz
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Failure modelling for ZnO varistors
Journal of Materials Processing Technology, 1998Abstract The energy-absorption capability of zinc oxide varistors depends on both the binder burn-out and shrinkage rate of the disc. This paper presents a study of the development of a failure model of a varistor disc with a nominal voltage V nom =5 kV and a diameter of 42 mm manufactured by rate-controlled sintering.
M.D Huda +3 more
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ZnO Varistors for Transient Protection
IEEE Transactions on Parts, Hybrids, and Packaging, 1977ZnO varistors are novel ceramic semiconductor devices used for protection of electronic equipment against transient overvoltages due to switching surges or lightning. This article describes the microstructure, circuit behavior, and operation of ZnO varistors.
L. Levinson, H. Philipp
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