Results 171 to 180 of about 156,786 (215)

Conduction mechanisms in ZnO varistors

Journal of Applied Physics, 1980
The thermionic emission enhanced by barrier lowering and the Zener tunnelling in ZnO varistors are discussed. Capacitance versus voltage, reverse current versus temperature, and 1/f noise measurements have been performed on commercial varistors. A model is proposed from which follows a diffusion voltage VD which is consistent both with the 1/C2 vs V ...
L. K. J. Vanadamme, J. C. Brugman
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ZnO Varistors for Transient Protection

IEEE Transactions on Parts, Hybrids, and Packaging, 1977
ZnO varistors are novel ceramic semiconductor devices used for protection of electronic equipment against transient overvoltages due to switching surges or lightning. This article describes the microstructure, circuit behavior, and operation of ZnO varistors.
L. Levinson, H. Philipp
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Defects and degradation in ZnO varistor

Applied Physics Letters, 1996
A systematic study of the defects in ZnO has been performed. The two commonly observed levels (L1, L2), located at around 0.15 and 0.24 eV under the conduction band, have been identified as native defects. The deep level transient spectroscopy depth profiling technique is applied on multilayer-chip-type ZnO varistors to determine the distribution ...
Wei-I Lee, Ruey-Ling Young
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Phase development in ZnO varistors

Advances in Applied Ceramics, 2014
Based on a typical ZnO varistor composition (97·0 mol.-% ZnO, 1·0 mol.-% Bi2O3, 1·0 mol.-% Sb2O3, 0·5 mol.-% MnO and 0·5 mol.-% Co3O4), phase development of the ZnO varistor during sintering has been investigated using in situ high temperature X-ray diffraction up to 900°C, and conventional ambient X-ray diffraction for samples sintered at 900°C to ...
Fan, J, Poosimma, P, Freer, Robert
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Prebreakdown Conduction in ZnO Varistors

Journal of the American Ceramic Society, 1992
A model which quantitatively accounts for the important features of prebreakdown conduction in ZnO‐based metal oxide varistors in presented. The prebreakdown current dependence with applied voltage and temperature enables us to extract several features for the grain boundary.
Miriam S. Castro, Guillermo M. Nuñez, Daniel E. Resasco, Celso M. Aldao   +3 more
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Varistor-capacitor characteristics of ZnO ceramics

Journal of Materials Science, 1986
Electrical properties of ZnO ceramics quenched from several temperatures during the cooling down from sintering temperature were correlated with microstructural changes. Barrier parameters were determined and their variation was interpreted under the assumption that measured donor densities were due to extrinsic donor defects segregated at grain ...
P. Q. Mantas, A. M. R. Senos, J. L. Baptista   +2 more
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Ceramic varistors based on ZnO–SnO2

Journal of the European Ceramic Society, 2004
Abstract Model ceramic varistor formulations based on 98% ZnO–SnO2 (plus 2% oxides of Bi, Co and Mn) were prepared by conventional powder processing routes; specimens were sintered at 1150–1275 °C. The product density increased with SnO2 content, but decreased with increase in sintering temperature.
A. Anastasiou, M.H.J. Lee, C. Leach, R. Freer   +3 more
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Rate-controlled shrinkage of ZnO varistors

Journal of Materials Processing Technology, 1996
Abstract Shrinkage of ZnO varistors has been controlled during the firing process at a constant rate using a feed back loop to control the heating rate. This was accomplished by developing software which calculates the shrinkage from a signal coming from a displacement transducer, then it compares the current shrinkage rate with a previously set ...
A. Al-Tounsi, R. Puyané, M.S.J. Hashmi
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Impedance and Modulus Spectroscopy of ZnO Varistors

Journal of Electroceramics, 1997
The ac response of ZnO varistors has been investigated over thetemperature range 100 to 380°C using impedance and modulusspectroscopy. Impedance spectra show only a single peak, which representsthe most resistive component in the sample and is responsible for the dcproperties, whereas an additional peak appears in the modulus spectrum.
A.R. West, M. Andres-Verges
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Intrinsic defects in ZnO varistors

Journal of Applied Physics, 1983
Theoretical calculations are presented for equilibrium concentrations of zinc and oxygen vacancies in ZnO. Results are presented at the sintering temperature, and also at room temperature. Theoretical calculations of reaction constants show that the intrinsic donor is the oxygen vacancy, rather than the zinc interstitial.
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