Results 121 to 130 of about 122,447 (215)

Removal of Impurities from EAFD Ammonium Carbonate Leachate and Upgrading the Purity of Prepared ZnO. [PDF]

Materials (Basel), 2023
Takacova Z, Piroskova J, Miskufova A, Vindt T, Hezelova M, Orac D.   +5 more
europepmc   +1 more source

Zinc Oxide Nanoparticles-Solution-Based Synthesis and Characterizations. [PDF]

Nanomaterials (Basel), 2023
Bhandari KP, Sapkota DR, Jamarkattel MK, Stillion Q, Collins RW.   +4 more
europepmc   +1 more source

Estudio de la región rica en Bi₂O₃ en el sistema binario ZnO-Bi₂O₃

Boletín de la Sociedad Española de Cerámica y Vidrio, 2004
Ceramic materials based in the ZnO- Bi2O3 system have their principal application as varistors. The binary system ZnO-Bi2O3 is specially relevant to the formation of the microstructure responsable of the varistor behaviour.
Caballero, A. C., Fernández, J. F., Peiteado, M., de la Rubia, M. A.   +3 more
doaj  

Influence of Sn doping on the optoelectronic properties of ZnO nanoparticles. [PDF]

Nanoscale Adv, 2023
Munna N, Abdur R, Islam R, Bashar MS, Farhad SFU, Kamruzzaman M, Aziz S, Shaikh MAA, Hossain M, Jamal MS.   +9 more
europepmc   +1 more source

Características microestructurales de varistores del sistema ZnO-BaO-P₂O₅

Boletín de la Sociedad Española de Cerámica y Vidrio, 1999
Ceramic materials based on the system ZnO-BaO show a great potential for varistor applications. However, the BaO rich phase located at the grain boundaries shows high solubility in water which causes severe damage of the materials.
Fernández, J. F., Durán, P., Moure, C., Villegas, M., Valle, F. J., Caballero, A. C.   +5 more
doaj  

Structural morphology and nonlinear behavior of pure and co-doped Zn_1-x-yFe_xM_yO varistors with (M = Cu, Ni). [PDF]

Appl Phys A Mater Sci Process, 2021
Al-Naim AF, Afify N, Sedky A, Ibrahim SS.   +3 more
europepmc   +1 more source

Electrical characteristics of top-down ZnO nanowire transistors using remote plasma ALD

Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a SiO2 pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 µm, are then fabricated
Masaud, T.B., Ashburn, P., Fang, Q., Gunn, R., Allen, M. W., Partridge, J., Clark, O.D., Sultan, S.M., Sun, K., Chong, H.M.H.   +9 more
core   +1 more source

Band alignment of ZnO-based nanorod arrays for enhanced visible light photocatalytic performance. [PDF]

RSC Adv, 2022
Wan J, Al-Baldawy AS, Qu S, Lan J, Ye X, Fei Y, Zhao J, Wang Z, Hong R, Guo S, Huang S, Li S, Kang J.   +12 more
europepmc   +1 more source

Varistores cerámicos basados en óxido de cinc

Boletín de la Sociedad Española de Cerámica y Vidrio, 2005
ZnO-based varistors are electroceramic devices with an extremely high non-linear electrical response, originated on a functional microstructure with well defined characteristics. In the present paper the development of these materials since its discovery
Peiteado, M.
doaj  

Synthesis of strontium oxide-zinc oxide nanocomposites by Co-precipitation method and its application for degradation of malachite green dye under direct sunlight. [PDF]

Heliyon, 2023
Anandhakumari G, Jayabal P, Balasankar A, Ramasundaram S, Oh TH, Aruchamy K, Kallem P, Polisetti V.   +7 more
europepmc   +1 more source