Results 121 to 130 of about 102,012 (284)

Polymorphic Superparaelectric Engineering Boosting Energy Storage Capacity in BaTiO3‐Based Ceramics

Advanced Science, EarlyView.
Herein, Ca2+ incorporation promotes the coexistence of CaTiO3‐/BaTiO3‐derived paraferroelectric states, stabilizing cubic‐orthorhombic‐tetragonal polymorphic superparaelectric phases. This minimizes polarization energy barriers, facilitating full polarization saturation without compromising efficiency.
Pan Liu, Xiang Ren, Jin Qian, Haihua Huang, Peng Li, Peng Fu, Jigong Hao, Huarong Zeng, Wei Li, Zhenxiang Cheng   +9 more
wiley   +1 more source

Synthesis and characterization of hydroxyapatite-gelatine composite materials for orthopaedic application [PDF]

, 2016
The composite materials based on hydroxyapatite (HA) and gelatine (Gel) with addition of silver and zirconium oxide were obtained. The study investigates a combination of low powered ultrasonic irradiation and low concentration of gelatine in the co ...
Bolshanina, S., Danilchenko, S., Husak, Е., Kuznetsov, V., Pogorielov, М., Stanislavov, A., Starikov, V., Yanovska, А.   +7 more
core  

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Fabrication of ZrC/SiC, ZrO2/SiC and ZrO2 powders by carbothermal reduction of ZrSiO4 [PDF]

Processing and Application of Ceramics, 2011
The zirconia/silicon carbide (ZrO2 /SiC) and ZrO2 powders are prepared by carbothermal reduction of natural mineral zircon (ZrSiO4). The zircon powder was mixed with activated carbon as a reducing agent and heattreated in a controlled flow atmosphere of ...
Ljiljana Kljajević, Branko Matović, Snežana Nenadović, Zvezdana Baščarević, Nikola Cvetićanin, Aleksandar Devečerski   +5 more
doaj  

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

Advanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max   +8 more
wiley   +1 more source

High‐Throughput Screening and Characterization of Non‐Flammable Na‐Cl Solid Electrolytes

Advanced Electronic Materials, EarlyView.
A Na‐Cl solid electrolyte with high ionic conductivity is screened from a structural database using force‐field molecular dynamics (MD) simulations and density functional theory (DFT)‐MD calculations. Na3La5Cl18 is identified, synthesized, and characterized.
Naoto Tanibata, Naoki Nonaka, Daisuke Urushihara, Hayami Takeda, Ryo Kobayashi, Naoaki Kuwata, Masanobu Nakayama   +6 more
wiley   +1 more source

Enhanced wear resistance, hydrophobic properties and corrosion resistance of plasma electrolyte oxidation coatings on Ti6Al4V alloys via addition of ZrO2 nanoparticles

Journal of Materials Research and Technology
Nanocomposite-coatings were fabricated on the Ti6Al4V titanium alloy plates via plasma electrolyte oxidation (PEO) with the addition of ZrO2 nanoparticles (NPs), followed by low surface energy modification.
Yue Yang, Weihua Zhang, Kunlong Zhang, Xiangyu Sun, Boxuan Men, Sirong Yu   +5 more
doaj   +1 more source

Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors

Advanced Electronic Materials, EarlyView.
Zirconium, hafnium, and mixed zirconium/hafnium doped indium tin oxide thin films are accessible by atomic layer deposition. The amorphous functional films are about 8 nm thick and show a high interdiffusion of all elements. Their transistor characteristics can be modulated depending on the amount of Zr and Hf oxide phases incorporated in these thin ...
Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann‐Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider   +5 more
wiley   +1 more source

Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs

Advanced Electronic Materials, EarlyView.
An ultrathin TiO2 interlayer suppresses oxygen‐vacancy formation in HZO‐based MFMIS FeFETs, enabling enlarged memory windows and reduced leakage current with improved switching characteristics. ABSTRACT We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (
Changhyeon Han, Been Kwak, Hyun‐Min Kim, Dahye Yu, Daewoong Kwon   +4 more
wiley   +1 more source

Effect of Amorphous Silica Addition on Martensitic Phase Transformation of Zirconia and Investigation of its Tetragonal Structure Stability Mechanisms

Journal of Advanced Materials in Engineering, 2020
This work is focused on the effect of amorphous SiO2 addition on the phase transformation and microstructural evolution of ZrO2 particles. Considering the structural similarities between the amorphous ZrO2 and its tetragonal structure, XRD results showed
M. Farhadian, K. Raeissi, M. A. Golozar
doaj