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Silicon Sensors for Experiments in High Energy Physics

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XXII DAE High Energy Physics Symposium

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 203))

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Abstract

With increasing luminosity of accelerators for experiments in high energy physics the demands on the detectors increase as well. Especially tracking and vertexing detectors made of silicon sensors close to the interaction point need to be equipped with more radiation hard devices. This article introduces the different types of silicon sensors, describes measures to increase radiation hardness and provides an overview of the present upgrade choices for experiments in high energy physics.

Alexander Dierlamm for the CMS Collaboration.

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Author information

Authors and Affiliations

  1. Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany

    Alexander Dierlamm

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  1. Alexander Dierlamm
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Corresponding author

Correspondence to Alexander Dierlamm .

Editor information

Editors and Affiliations

  1. Department of Physics, University of Delhi, New Delhi, India

    Md. Naimuddin

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Dierlamm, A. (2018). Silicon Sensors for Experiments in High Energy Physics. In: Naimuddin, M. (eds) XXII DAE High Energy Physics Symposium . Springer Proceedings in Physics, vol 203. Springer, Cham. https://doi.org/10.1007/978-3-319-73171-1_2

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