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Fundamentals of Thermoelectrical Effect in SiC

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Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

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Abstract

This chapter presents the fundamentals of thermoresistive effect in different SiC morphologies including single-crystalline cubic SiC, polycrystalline and amorphous SiC. The thermocapacitive and thermoelectric effects are also summarised. In addition, recent advances in the characterisation of the thermoelectrical effect in SiC single and double layers with a heterostructure will be discussed. Other aspects of temperature effect on the electrical properties of SiC are mentioned.

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Authors and Affiliations

  1. Queensland Micro- and Nanotechnology Centre (QMNC), Griffth University, Brisbane, QLD, Australia

    Toan Dinh

  2. Queensland Micro- and Nanotechnology Centre (QMNC), Griffith University, Brisbane, QLD, Australia

    Nam-Trung Nguyen

  3. School of Engineering and Built Environment, Griffith University, Southport, QLD, Australia

    Dzung Viet Dao

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  1. Toan Dinh
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  2. Nam-Trung Nguyen
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  3. Dzung Viet Dao
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Correspondence to Toan Dinh .

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Dinh, T., Nguyen, NT., Dao, D.V. (2018). Fundamentals of Thermoelectrical Effect in SiC. In: Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors. SpringerBriefs in Applied Sciences and Technology. Springer, Singapore. https://doi.org/10.1007/978-981-13-2571-7_2

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