Abstract:
A tunneling injection mechanism into the channel of a modulation doping field effect transistor is discussed. In the presaturation regime of the drain current, the source...Show MoreMetadata
Abstract:
A tunneling injection mechanism into the channel of a modulation doping field effect transistor is discussed. In the presaturation regime of the drain current, the source current exhibits negative differential resistance as a result of the charge control by the gate field in the channel. The tunneling three-terminal device promises high-frequency operation.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 35, Issue: 9, September 1988)
DOI: 10.1109/16.2587